Title:
SCHOTTKY DIODE FOR SUB-MICRO IC AND METHOD OF MAKING THE SAME
Document Type and Number:
WIPO Patent Application WO/2008/022488
Kind Code:
A1
Abstract:
A Schottky diode for sub-micro IC and method of making the same are provided. The Schottky
diode comprises a substrate, a semiconductor layer (17), a metal-oxide-semiconductor gate
dielectric layer (11), a barrier layer (31), a metal-oxide-semiconductor gate
(14), and a wiring interconnection (51), wherein the gate dielectric layer (11),
the barrier layer (31) and the wiring interconnection (51) are sequentialy laminated
on the substrate. The barrier layer (31) is positioned between the gate dielectric
layer (11) and the wiring interconnection (51). The wiring interconnection (51)
directly contact the semiconductor layer (17), and there is no barrier layer (31)
exiting between them. The Schottky diode and the method of making same same can
meet the requirements of metal-oxide-semiconductor process and be suitable for
integrated production of sub-micro IC also.
Inventors:
LEE JIA-SHENG (CN)
LI ZHAOBING (CN)
SHI XIAODONG (CN)
CHEN BIN (CN)
LI ZHAOBING (CN)
SHI XIAODONG (CN)
CHEN BIN (CN)
Application Number:
PCT/CN2006/002104
Publication Date:
February 28, 2008
Filing Date:
August 18, 2006
Export Citation:
Assignee:
HE JIAN TECHNOLOGY SUZHOU CO L (CN)
LEE JIA-SHENG (CN)
LI ZHAOBING (CN)
SHI XIAODONG (CN)
CHEN BIN (CN)
LEE JIA-SHENG (CN)
LI ZHAOBING (CN)
SHI XIAODONG (CN)
CHEN BIN (CN)
International Classes:
H01L29/872; H01L21/336; H01L27/095; H01L29/47; H01L29/94
Foreign References:
| US5915179A | 1999-06-22 | |||
| CN1547765A | 2004-11-17 |
Attorney, Agent or Firm:
LIAN & LIEN IP ATTORNEYS (Tower A Huaxin Building,No. 33 Anding Road,Chaoyang District, Beijing 9, CN)
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