SCINTILLATOR FOR CHARGED PARTICLE BEAM DEVICE AND CHARGED PARTICLE BEAM DEVICE

Title:

SCINTILLATOR FOR CHARGED PARTICLE BEAM DEVICE AND CHARGED PARTICLE BEAM DEVICE

Document Type and Number:

WIPO Patent Application WO/2021/005743

Kind Code:

A1

Abstract:

The purpose of the present invention is to provide a scintillator for a charged particle beam device and a charged particle beam device which achieve both an increase in emission intensity and a reduction in afterglow intensity.　This scintillator for a charged particle beam device is characterized by comprising a substrate (13), a buffer layer (14) formed on a surface of the substrate (13), a stack (12) of a light emitting layer (15) and a barrier layer (16) formed on a surface of the buffer layer (14), and a conductive layer (17) formed on a surface of the stack (12) and by being configured such that the light emitting layer (15) contains InGaN, the barrier layer (16) contains GaN, and the ratio b/a of the thickness b of the barrier layer (16) to the thickness a of the light emitting layer (15) is 11 to 25.

Inventors:

TAKAHASHI ERI (JP)
IMAMURA SHIN (JP)
SUZUKI MAKOTO (JP)
MIZUTANI SHUNSUKE (JP)

Application Number:

PCT/JP2019/027312

Publication Date:

January 14, 2021

Filing Date:

July 10, 2019

Export Citation:

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Assignee:

HITACHI HIGH TECH CORP (JP)

International Classes:

H01J37/244; H01J49/06

Foreign References:

JP2017135039A	2017-08-03
JP2006310819A	2006-11-09
JP2000319653A	2000-11-21

Other References: