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Title:
SEED CRYSTAL FOR 4H-SIC SINGLE-CRYSTAL GROWTH, AND METHOD FOR PROCESSING SAID SEED CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2019/146336
Kind Code:
A1
Abstract:
The present invention provides a disk-like seed crystal for 4H-SiC single-crystal growth, the seed crystal having a diameter greater than 150 mm and a thickness that is at least 1 mm and no more than 0.03 times the diameter, wherein one surface on which single-crystal 4H-SiC is grown is a mirror surface, the Ra of the other surface is greater than 10 nm, and the absolute value of the size of undulations in a state in which the seed crystal is freely deformed to reduce the internal stress distribution is 12 μm or less.

Inventors:
KIDO Takanori (60 Kiyosaki-cho, Hikone-sh, Shiga 95, 〒5291195, JP)
NAGAYA Masatake (1-1 Showa-cho, Kariya-sh, Aichi 61, 〒4488661, JP)
TAKABA Hidetaka (1-1 Showa-cho, Kariya-sh, Aichi 61, 〒4488661, JP)
Application Number:
JP2018/047225
Publication Date:
August 01, 2019
Filing Date:
December 21, 2018
Export Citation:
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Assignee:
SHOWA DENKO K.K. (13-9, Shibadaimon 1-chome Minato-k, Tokyo 18, 〒1058518, JP)
DENSO CORPORATION (1-1 Showa-cho, Kariya-shi Aichi, 61, 〒4488661, JP)
International Classes:
C30B29/36; B24B7/22; C30B23/00; C30B33/00; H01L21/304
Foreign References:
JP2002308697A2002-10-23
JP2014210687A2014-11-13
JP2008227534A2008-09-25
JP2011222750A2011-11-04
JP2011009700A2011-01-13
JP2016501809A2016-01-21
JP2017065954A2017-04-06
Attorney, Agent or Firm:
OIKAWA Shu et al. (1-9-2, Marunouchi Chiyoda-k, Tokyo 20, 〒1006620, JP)
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