Title:
SEED CRYSTAL FOR SIC SINGLE-CRYSTAL GROWTH, SIC SINGLE CRYSTAL, AND METHOD OF MANUFACTURING THE SIC SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2014/076893
Kind Code:
A1
Abstract:
A seed crystal for SiC single-crystal growth includes a facet formation region containing a {0001}-plane uppermost portion and n (n >= 3) planes provided enclosing the periphery of the facet formation region. The seed crystal for SiC single-crystal growth satisfies the relationships represented by formula (a): Bk
k-1 <= cos-1(sin(2.3 degrees)/sinCk), formula (b): Bk
k <= cos-1(sin(2.3 degrees)/sinCk), and formula (c): min(Ck) <= 20 degrees. In the formulas, Ck is an offset angle of a k-th plane, Bk
k-1 is an angle defined by an offset downstream direction of the k-th plane and a (k-1)-th ridge line, and Bk
k is an angle defined by the offset downstream direction of the k-th plane and a k-th ridge line.
Inventors:
GUNJISHIMA ITARU (JP)
SHIGETOH KEISUKE (JP)
URAKAMI YASUSHI (JP)
MATSUSE AKIHIRO (JP)
SHIGETOH KEISUKE (JP)
URAKAMI YASUSHI (JP)
MATSUSE AKIHIRO (JP)
Application Number:
PCT/JP2013/006389
Publication Date:
May 22, 2014
Filing Date:
October 29, 2013
Export Citation:
Assignee:
TOYOTA CHUO KENKYUSHO KK (JP)
DENSO CORP (JP)
SHOWA DENKO KK (JP)
DENSO CORP (JP)
SHOWA DENKO KK (JP)
International Classes:
C30B7/00; C30B9/00; C30B23/00; C30B25/00; C30B29/36
Domestic Patent References:
| WO2012157654A1 | 2012-11-22 |
Foreign References:
| US20120060751A1 | 2012-03-15 | |||
| DE102010029755A1 | 2011-12-08 | |||
| US20120132132A1 | 2012-05-31 | |||
| JP2004323348A | 2004-11-18 | |||
| JPH1045499A | 1998-02-17 | |||
| JP2006225232A | 2006-08-31 | |||
| JP2012046377A | 2012-03-08 |
Attorney, Agent or Firm:
HATAKEYAMA, Fumio (2847-25 Minamiyama, Nagasaka-cho, Owariasahi-sh, Aichi 21, JP)
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