SELECT DEVICES INCLUDING AN OPEN VOLUME, MEMORY DEVICES AND SYSTEMS INCLUDING SAME, AND METHODS FOR FORMING SAME

Title:

SELECT DEVICES INCLUDING AN OPEN VOLUME, MEMORY DEVICES AND SYSTEMS INCLUDING SAME, AND METHODS FOR FORMING SAME

Document Type and Number:

WIPO Patent Application WO/2010/059451

Kind Code:

A3

Abstract:

Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select device may comprise, for example, a metal insulator insulator metal (MIIM) device. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices.

Inventors:

SRINIVASAN BHASKAR (US)
SANDHU GURTEJ S (US)

Application Number:

PCT/US2009/063761

Publication Date:

August 26, 2010

Filing Date:

November 09, 2009

Export Citation:

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Assignee:

MICRON TECHNOLOGY INC (US)
SRINIVASAN BHASKAR (US)
SANDHU GURTEJ S (US)

International Classes:

H01L29/861

Foreign References:

US20050062074A1	2005-03-24
US20040201057A1	2004-10-14
US6350628B1	2002-02-26
US7091052B2	2006-08-15

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