Title:
SELECTIVE ELEMENT AND STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/203459
Kind Code:
A1
Abstract:
A selective element according to one embodiment of the present disclosure is provided with: a first electrode; a second electrode disposed opposite to the first electrode; a semiconductor layer that is provided between the first electrode and the second electrode and that includes at least one chalcogen element selected from tellurium (Te), selenium (Se), and sulfur (S) and includes at least one first element selected from boron (B), aluminum (Al), gallium (Ga), phosphorus (P), arsenic (As), carbon (C), germanium (Ge), and silicon (Si); and a first heat bypass layer that has higher thermal conductivity than the semiconductor layer and that is provided on at least a part of the periphery of the semiconductor layer, between the first electrode and the second electrode.
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Inventors:
IKARASHI MINORU (JP)
SONE TAKEYUKI (JP)
NONOGUCHI SEIJI (JP)
SEI HIROAKI (JP)
OHBA KAZUHIRO (JP)
SONE TAKEYUKI (JP)
NONOGUCHI SEIJI (JP)
SEI HIROAKI (JP)
OHBA KAZUHIRO (JP)
Application Number:
PCT/JP2018/014717
Publication Date:
November 08, 2018
Filing Date:
April 06, 2018
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/8239; H01L27/105; H01L45/00; H01L49/00
Foreign References:
| JP2010040820A | 2010-02-18 | |||
| US20160133671A1 | 2016-05-12 | |||
| JP2009099990A | 2009-05-07 | |||
| JP2014530491A | 2014-11-17 | |||
| JP2007243170A | 2007-09-20 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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