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Title:
SELECTIVE SILICON NITRIDE ETCH
Document Type and Number:
WIPO Patent Application WO/2012/145657
Kind Code:
A3
Abstract:
Methods and etchant solutions for etching silicon nitride on a workpiece are provided. One method generally includes exposing the workpiece to a chemistry mixture including phosphoric acid and a diluent, wherein the chemistry mixture has a water content of less than 10% by volume, and heating at least one of the workpiece and the chemistry mixture to a process temperature to etch silicon nitride from the workpiece.

Inventors:
BERGMAN ERIC J (US)
LEONHARD JERRY DUSTIN (US)
Application Number:
PCT/US2012/034495
Publication Date:
March 21, 2013
Filing Date:
April 20, 2012
Export Citation:
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Assignee:
APPLIED MATERIALS INC (US)
BERGMAN ERIC J (US)
LEONHARD JERRY DUSTIN (US)
International Classes:
H01L21/306
Foreign References:
US20080064223A12008-03-13
US20050103750A12005-05-19
US5380408A1995-01-10
US20080035609A12008-02-14
Attorney, Agent or Firm:
PEYSER, Emily, C. (1420 Fifth Avenue Suite 280, Seattle WA, US)
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