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Title:
SELF DRIVE CIRCUIT FOR TWO-TRANSISTOR FORWARD SYNCHRONOUS RECTIFIER CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2020/114248
Kind Code:
A1
Abstract:
Disclosed is a self drive circuit for a two-transistor forward synchronous rectifier circuit. The two-transistor forward synchronous rectifier circuit comprises a transformer, a two-transistor forward network at the primary side of the transformer, and a synchronous rectifier conversion network at the secondary side of the transformer. The transformer comprises a first primary winding, a first secondary winding, and a second secondary winding. The self drive circuit for the two-transistor forward synchronous rectifier circuit drives a freewheeling transistor in the synchronous rectifier conversion network. A rectifier transistor in the synchronous rectifier conversion network is driven by controlling an operation state of a first P-type MOS transistor in the self-drive circuit. When a synchronous rectifier transistor and a synchronous freewheeling transistor at the secondary side of the transformer are turned on at the same time, the freewheeling transistor is capable of obtaining a drive voltage and providing a conduction path to an output inductor at a next stage, thereby improving the efficiency of a converter, realizing adjustability of the drive voltage of the freewheeling transistor, and achieving flexible and reliable control.

Inventors:
YANG ZHI (CN)
PAN CHENGZHANG (CN)
CHENG ZHIYONG (CN)
Application Number:
PCT/CN2019/119577
Publication Date:
June 11, 2020
Filing Date:
November 20, 2019
Export Citation:
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Assignee:
MORNSUN GUANGZHOU SCI & TECH (CN)
International Classes:
H02M1/088
Foreign References:
CN109347311A2019-02-15
CN101237189A2008-08-06
CN101227150A2008-07-23
CN105703642A2016-06-22
US20080192517A12008-08-14
Attorney, Agent or Firm:
GUANGZHOU ZHIYOU PATENT & TRADEMARK AGENCY CO., LTD. (CN)
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