Title:
SELF-GATING RESISTIVE STORAGE DEVICE AND METHOD FOR FABRICATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2017/185326
Kind Code:
A1
Abstract:
Provided are a self-gating resistive storage device and a method for fabrication thereof; said self-gating resistive storage device comprises: lower electrodes (301, 302, 303); insulating dielectric layers (201, 202, 203, 204) arranged perpendicular to, and intersecting with, the lower electrodes (301, 302, 303) to form a stacked structure, said stacked structure being provided with a vertical groove (401); a gating layer (502) grown on the lower electrodes (301, 302, 303) by means of self-alignment technology, the interlayer leakage channel running through the gating layer (502) being isolated via the insulating dielectric layers (201, 202, 203, 204); a resistance transition layer (601) arranged in the vertical groove (401) and connected to the insulating dielectric layers (201, 202, 203, 204) and the gating layer (502); an upper electrode (702) arranged in the resistance transition layer (601). In the storage device provided by the described technical solution, a gating layer (502) is grown on the lower electrodes (301, 302, 303) by means of self-alignment technology, such that the interlayer leakage channel running through the gating layer is isolated via the insulating dielectric layers (201, 202, 203, 204); thus leakage of the upper and lower wordlines by means of the gating layer is prevented, solving the technical problem in the prior art of leakage between the upper and lower wordlines in a self-gating resistive storage device, improving the reliability of the device.
Inventors:
LV HANGBING (CN)
LIU MING (CN)
XU XIAOXIN (CN)
LUO QING (CN)
LIU QI (CN)
LONG SHIBING (CN)
LIU MING (CN)
XU XIAOXIN (CN)
LUO QING (CN)
LIU QI (CN)
LONG SHIBING (CN)
Application Number:
PCT/CN2016/080659
Publication Date:
November 02, 2017
Filing Date:
April 29, 2016
Export Citation:
Assignee:
THE INST OF MICROELECTRONICS OF CHINESE ACAD OF SCIENCES (CN)
International Classes:
H01L45/00; H01L27/24
Foreign References:
| CN105826468A | 2016-08-03 | |||
| CN104485418A | 2015-04-01 | |||
| CN105428526A | 2016-03-23 | |||
| CN105070735A | 2015-11-18 | |||
| US20110227023A1 | 2011-09-22 |
Attorney, Agent or Firm:
BEIJING BRIGHT & RIGHT LAW FIRM (CN)
Download PDF:
Previous Patent: NEW TYPE OF EYEGLASSES FRAME STRUCTURE
Next Patent: USER INTERFACE DISPLAY METHOD AND TERMINAL
Next Patent: USER INTERFACE DISPLAY METHOD AND TERMINAL