Title:
SELF-RECTIFYING RESISTIVE MEMORY AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/183828
Kind Code:
A1
Abstract:
A self-rectifying resistive memory, comprising: a lower electrode (101); a resistive material layer (201) that is formed on the lower electrode (101) and used for serving as a storage medium; a barrier layer (301) that is formed on the resistive material layer (201) and uses a semiconductor material or an insulating material; and an upper electrode (401) that is formed on the barrier layer (301) and achieves Schottky contact with the material of the barrier layer (301), wherein the Schottky contact between the materials of the upper electrode (401) and the barrier layer (301) is used to achieve the self-rectification of the self-rectifying resistive memory, and no additional gate transistor or diode is needed to act as a gate unit; and since the device has self-rectifying characteristics, read crosstalk in a cross array may be suppressed.
Inventors:
LUO QING (CN)
LV HANGBING (CN)
LIU MING (CN)
LV HANGBING (CN)
LIU MING (CN)
Application Number:
PCT/CN2018/080852
Publication Date:
October 03, 2019
Filing Date:
March 28, 2018
Export Citation:
Assignee:
INST OF MICROELECTRONICS CAS (CN)
International Classes:
H01L45/00
Foreign References:
| CN105870321A | 2016-08-17 | |||
| CN101783388A | 2010-07-21 | |||
| CN102280577A | 2011-12-14 | |||
| CN102903845A | 2013-01-30 | |||
| CN101425559A | 2009-05-06 | |||
| US20030132458A1 | 2003-07-17 |
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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