Title:
SEMI-CONDUCTOR COMPONENT WITH A PASSIVATION LAYER MADE FROM HYDROGENATED ALUMINIUM NITRIDE AND METHOD FOR SURFACE PASSIVATION OF SEMI-CONDUCTOR COMPONENTS
Document Type and Number:
WIPO Patent Application WO/2014/027075
Kind Code:
A3
Abstract:
The invention relates to a semi-conductor component comprising a base emitter, electric contacts and at least one passivation layer which is made of hydrogenated aluminum nitride or contains essentially said latter. The invention also relates to a corresponding method for the surface passivation of semi-conductor components.
Inventors:
WOLKE WINFRIED (DE)
WAGNER FLORIAN (DE)
KRUGEL GEORG (DE)
WAGNER FLORIAN (DE)
KRUGEL GEORG (DE)
Application Number:
PCT/EP2013/067108
Publication Date:
June 26, 2014
Filing Date:
August 16, 2013
Export Citation:
Assignee:
FRAUNHOFER GES FORSCHUNG (DE)
International Classes:
H01L31/0216
Foreign References:
| EP2390921A2 | 2011-11-30 |
Other References:
KRUGEL GEORG ET AL: "Passivation of solar cell emitters using aluminum nitride", 2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), IEEE, 16 June 2013 (2013-06-16), pages 1249 - 1253, XP032568243, DOI: 10.1109/PVSC.2013.6744367
DESPAX B ET AL: "Hydrogenated aluminum nitride thin films prepared by r.f. reactive sputtering. Infrared and structural properties", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 265, no. 1, 1 September 1995 (1995-09-01), pages 15 - 21, XP004001501, ISSN: 0040-6090, DOI: 10.1016/0040-6090(95)06605-5
DESPAX B ET AL: "Hydrogenated aluminum nitride thin films prepared by r.f. reactive sputtering. Infrared and structural properties", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 265, no. 1, 1 September 1995 (1995-09-01), pages 15 - 21, XP004001501, ISSN: 0040-6090, DOI: 10.1016/0040-6090(95)06605-5
Attorney, Agent or Firm:
REITZLE, Helmut (Meinig & Partner GbRTheresienhöe 13, München, DE)
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