SEMICONDUCTIVE SHIELD FREE OF WELD LINES AND PROTRUSIONS

WIPO Patent Application WO/2018/000314

A1

Semiconductive shield layers for power cable constructions are made from a composition comprising: (A) A nonpolar, ethylene-based polymer having a density of greater than (>) 0.90 g/cc and a melt index of >20 g/10 min at 190℃/2.16 Kg; (B) A polar polymer consisting of ethylene and an unsaturated alkyl ester having 4 to 20 carbon atoms; (C) Acetylene carbon black; and (D) A curing agent; with the provisos that (1) the composition has a phase separated structure, and (2) the weight ratio of nonpolar polymer to polar polymer is from 0.25 to 4.

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SONG XIAOMEI (CN)
CHEN HONGYU (CN)
SUN YABIN (CN)
WU YOUJUN (CN)
LI WEI (CN)
MIAO XIAOXIONG (CN)

PCT/CN2016/087870

January 04, 2018

June 30, 2016

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DOW GLOBAL TECHNOLOGIES LLC (US)
SONG XIAOMEI (CN)
CHEN HONGYU (CN)
SUN YABIN (CN)
WU YOUJUN (CN)
LI WEI (CN)
MIAO XIAOXIONG (CN)

C08K3/04; C08L23/04

CN102875883A	2013-01-16
CN104870549A	2015-08-26
CN103098145A	2013-05-08
CN101014652A	2007-08-08
US6277303B1	2001-08-21

See also references of EP 3478760A4

WU, FENG & ZHANG CO. (CN)

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