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Title:
SEMICONDUCTIVE STRUCTURES, METHODS FOR CONTROLLING THEIR CONDUCTIVITY AND SENSITIVE ELEMENTS BASED ON THOSE SEMICONDUCTIVE STRUCTURES
Document Type and Number:
WIPO Patent Application WO/1991/008593
Kind Code:
A1
Abstract:
A semiconductive structure where the relationship between the admixture concentrations is such that the number of carriers generated by an admixture of first-type conductivity and compensated by a third admixture is essentially equal to, or exceeds by no more than one order, the number of carriers generated by an admixture of second-type conductivity. In a method for controlling the conductivity of a semiconductive structure (1), the value of the current in the course of formation of the current column is established within a range where in the semiconductive structure (1) appears a periodical change of conductivity leading to the change of conductivity of the whole semiconductive structure (1) and a pulse sequence is obtained at the output of the semiconductive structure (1). For the structures (1) in which the number of carriers generated by the admixture of first-type conductivity and compensated by the third admixture exceeds by no more than one order the number of carriers generated by the admixture of second-type conductivity, it is necessary to apply an external influence to the structure (1) during the formation of the current column. At least one external influence is applied for controlling the change frequency of the conductivity within the zone of the current column of the structure (1).

Inventors:
ZOTOV VLADISLAV DMITRIEVICH (SU)
BODROV VLADIMIR NIKOLAEVICH (SU)
VINOGRADOVA ELENA PETROVNA (SU)
SEROV ANATOLY TROFIMOVICH (SU)
Application Number:
PCT/SU1989/000340
Publication Date:
June 13, 1991
Filing Date:
December 29, 1989
Export Citation:
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Assignee:
INST UPRAVLENIA AKADEMII NAUK (SU)
International Classes:
H01L31/111; H01L29/00; H01L29/06; H01L29/82; H01L29/861; H01L37/02; H01L43/08; (IPC1-7): H01L29/02
Foreign References:
SU1161831A11985-06-15
Other References:
I.M. VIKULIN et al. "Galvanomagnitnye pribory" 1983, Radio i svyaz (Moscow), pages 39-42.
Fizika i tekhnika poluprovodnikov, Vol. 8, vyp. 1, January 1974 (Nauka, Leningrad), pages 39-44; N.B. ZALETAEV et al. "Vliyanie osveschenia na svoistva s-diodov iz germania s primesju zolota".
Fizika i tekhnika poluprovodnikov, Vol. 12, vyp. 6, May 1978 (Nauka, Leningrad), pages 1187-1188, S.A. AZIMOV et al. "Magnitochuvstvitelnye diody iz kremnia, kompensirovannogo iridiem".
Fizika i tekhnika poluprovodnikov, Vol. 10, vyp. 3, March 1976 (Nauka, Leningrad), pages 511-517, P.T. ORESHKIN et al. "Nekotorye svoistva shnurov toka v diodnykh strukturakh na osnove stekloobraznykh poluprovodnikov".
Fizika i tekhnika poluprovodnikov, Vol. 19, vyp. 7, July 1985 (Nauka, Leningrad), pages 1334-1335, V. BLONSKIS et al. "Neustoichivost shnura toka v poperechnom magnitnom pole v kremnievykh n+ - n - n+ - strukturakh s razlichnymi ploschadyami perekhodov".
Fizika i tekhnika poluprovodnikov, Vol. 18, vyp. 8, May 1984 (Nauka, Leningrad), pages 1383-1385 A.T. GORELENOK et al. "Osobennosti razvitia tokovykh shnurov v poluprovodnikakh".
See also references of EP 0456825A4
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