Title:
SEMICONDUCTOR CHARGE EMISSION TEST METHOD AND APPARATUS
Document Type and Number:
WIPO Patent Application WO/2019/051659
Kind Code:
A1
Abstract:
Disclosed are a semiconductor charge emission test method and apparatus, belonging to the field of charge emission tests. The method comprises: S1: loading a voltage from a power source end (1) to a first electrode (2), and then successively transmitting same to a semiconductor (3), a sample (4) and a second electrode (5), wherein the process forms a circuit loop, and a hollow area (25) is formed in the first electrode (2); S2: continuing to load the voltage to an apparatus, and disconnecting a power source until a required test time is reached; S3: removing the apparatus, and retaining the sample (4); and S4: measuring charges in a first area (41) of the sample (4). The apparatus comprises a power source end (1) and a first electrode (2) connected thereto, wherein a hollow area (25) is formed in the first electrode (2), the first electrode (2) is in contact with a semiconductor (3), the semiconductor (3) is in contact with a sample (4) to be tested, and the sample (4) is placed on a second electrode (5). The present invention is used for testing whether a semiconductor (3) emits charges to a sample (4), thereby facilitating the improvement or rational use of materials.
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Inventors:
WEI YANHUI (CN)
LI GUOCHANG (CN)
LEI QINGQUAN (CN)
HAO CHUNCHENG (CN)
LI GUOCHANG (CN)
LEI QINGQUAN (CN)
HAO CHUNCHENG (CN)
Application Number:
PCT/CN2017/101514
Publication Date:
March 21, 2019
Filing Date:
September 13, 2017
Export Citation:
Assignee:
QINGDAO UNIV OF SCIENCE AND TECHNOLOGY (CN)
International Classes:
G01R31/26; G01R29/24
Foreign References:
| CN207336703U | 2018-05-08 | |||
| CN106680679A | 2017-05-17 | |||
| CN103091607A | 2013-05-08 | |||
| CN106771684A | 2017-05-31 | |||
| CN104777374A | 2015-07-15 | |||
| US20140159755A1 | 2014-06-12 |
Attorney, Agent or Firm:
QINGDAO LAWSCI INTELLECTUAL PROPERTY LAW OFFICE(GENERAL PARTNERSHIP) (CN)
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