Title:
SEMICONDUCTOR CHIP FOR LIGHT EMITTING DIODE, QUANTUM WELL LAYER OF SEMICONDUCTOR CHIP, AND MANUFACTURING METHOD FOR SEMICONDUCTOR CHIP
Document Type and Number:
WIPO Patent Application WO/2020/052558
Kind Code:
A1
Abstract:
A semiconductor chip for a light emitting diode, a quantum well layer of the semiconductor chip, and a manufacturing method for the semiconductor chip. The semiconductor chip comprises: a substrate (10); an N-type gallium nitride layer (20), a quantum well layer (30), and a P-type gallium nitride layer (40) which are sequentially stacked on the substrate (10); and an N-type electrode (50) electrically connected to the N-type gallium nitride layer (20) and a P-type electrode (60) electrically connected to the P-type gallium nitride layer (40). The quantum well layer (30) comprises at least one quantum barrier and at least one quantum well which are sequentially stacked; and the growth pressure of the quantum barrier and the growth pressure of the quantum well are different. In this way, the crystal quality of the well barrier interface of the quantum well and the quantum barrier can be improved, thereby improving the light efficiency of a light emitting diode.
Inventors:
WAN ZHI (CN)
ZHUO XIANGJING (CN)
YAO GANG (CN)
LIN ZHIWEI (CN)
ZHUO XIANGJING (CN)
YAO GANG (CN)
LIN ZHIWEI (CN)
Application Number:
PCT/CN2019/105166
Publication Date:
March 19, 2020
Filing Date:
September 10, 2019
Export Citation:
Assignee:
XIAMEN CHANGELIGHT CO LTD (CN)
International Classes:
H01L33/06
Foreign References:
| CN108258087A | 2018-07-06 | |||
| CN109166950A | 2019-01-08 | |||
| CN208938996U | 2019-06-04 | |||
| CN103325902A | 2013-09-25 | |||
| CN103904171A | 2014-07-02 |
Attorney, Agent or Firm:
NINGBO RAYMOND IP AGENCY FIRM (CN)
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