SEMICONDUCTOR CRYSTAL SUBSTRATE, INFRARED DETECTION DEVICE, OPTICAL SEMICONDUCTOR DEVICE, THERMOELECTRIC CONVERSION ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR CRYSTAL SUBSTRATE, AND METHOD FOR MANUFACTURING INFRARED DETECTION DEVICE

Title:

Document Type and Number:

WIPO Patent Application WO/2018/131494

Kind Code:

A1

Abstract:

[Problem] To provide a semiconductor crystal substrate in which dislocation and lattice defects in an InAs/GaSb superlattice structure are reduced. [Solution] The problem is solved by a semiconductor crystal substrate comprising a crystal substrate with a major surface inclined from a (001) plane, and a superlattice structure layer formed by alternately stacking a first superlattice forming layer and a second superlattice forming layer on the major surface of the crystal substrate, characterized in that: the first superlattice forming layer is formed of a Ga1-x1Inx1Asy1Sb1-y1(0 ≤ x1 ≤ 0.1, 0 ≤ y1 ≤ 0.1) layer, wherein the value of standard deviation with respect to an average value of an atomic step width in a direction in which a surface of the first superlattice forming layer is inclined (standard deviation/value of the average value) is not less than 0 and not more than 0.20; and the second superlattice forming layer is formed of a Ga1-x2Inx2Asy2Sb1-y2(0.9 ≤ x2 ≤ 1, 0.9 ≤ y2 ≤ 1) layer, wherein the value of standard deviation with respect to an average value of an atomic step width in a direction in which a surface of the second superlattice forming layer is inclined (standard deviation/value of the average value) is not less than 0 and not more than 0.40.

More Like This:

WO/2018/064177	REFLECTIVE STRUCTURE FOR LIGHT EMITTING DEVICES
JPS60130874	LIGHT EMITTING SEMICONDUCTOR DEVICE
WO/2023/145217	LIGHT-EMITTING DEVICE, AND SUBSTRATE HAVING LIGHT-EMITTING DEVICE FORMED THEREON

Inventors:

OKUMURA SHIGEKAZU (JP)
TOMABECHI SHUICHI (JP)

Application Number:

PCT/JP2017/047068

Publication Date:

July 19, 2018

Filing Date:

December 27, 2017

Export Citation:

Click for automatic bibliography generation Help

Assignee:

FUJITSU LTD (JP)

International Classes:

H01L33/16; H01L21/203; H01L27/144; H01L31/10; H01L33/30; H01L35/18; H01L35/26; H01S5/343

Foreign References:

JP2012009777A	2012-01-12
JP2017011168A	2017-01-12
JPH0442983A	1992-02-13
US20150303344A1	2015-10-22

Attorney, Agent or Firm:

MUKOUYAMA Naoki (JP)

Download PDF:

View/Download PDF PDF Help

Previous Patent: METHOD OF PRODUCING AMMONIUM PERSULFATE

Next Patent: METHOD FOR FORMING COVER FILM, METHOD FOR PROCESSING SUBSTRATE, AND COMPOSITION