Title:
SEMICONDUCTOR DEVICE, CAPACITIVE ELEMENT, AND METHOD OF PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2022/049449
Kind Code:
A1
Abstract:
Provided is a semiconductor device that enables greater refinement or a higher degree of integration. In the invention, a first electroconductor is formed on a substrate, a ferroelectric layer is formed on the first electroconductor, and a second electroconductor is formed on the ferroelectric layer while substrate heating is being performed. The ferroelectric layer comprises hafnium oxide and zirconium oxide. After the second electroconductor has been formed, no heating treatment at 500°C or higher is performed.
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Inventors:
YAMAZAKI SHUNPEI (JP)
JINBO YASUHIRO (JP)
KUNITAKE HITOSHI (JP)
BABA HARUYUKI (JP)
ITO YUKI (JP)
ISAKA FUMITO (JP)
TANEMURA KAZUKI (JP)
YAMANE YASUMASA (JP)
ONUKI TATSUYA (JP)
JINBO YASUHIRO (JP)
KUNITAKE HITOSHI (JP)
BABA HARUYUKI (JP)
ITO YUKI (JP)
ISAKA FUMITO (JP)
TANEMURA KAZUKI (JP)
YAMANE YASUMASA (JP)
ONUKI TATSUYA (JP)
Application Number:
PCT/IB2021/057736
Publication Date:
March 10, 2022
Filing Date:
August 24, 2021
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L27/04; H01L21/428; H01L21/477; H01L21/822; H01L21/8234; H01L27/06; H01L27/088; H01L27/11507; H01L29/786
Domestic Patent References:
| WO2020008304A1 | 2020-01-09 |
Foreign References:
| US20180366174A1 | 2018-12-20 | |||
| US20200091162A1 | 2020-03-19 | |||
| JP2020123612A | 2020-08-13 | |||
| JP2004022702A | 2004-01-22 |
Other References:
ZARUBIN, SERGEI ET AL.: "Fully ALD-grown TiN/Hf0.5Zr0.502/TiN stacks: Ferroelectric and structural properties", APPLIED PHYSICS LETTERS, vol. 109, no. 19, 8 November 2016 (2016-11-08), pages 192903 - 1-192903-5, XP012213579, DOI: 10.1063/1.4966219
LEDERER, M. ET AL.: "Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD", APPLIED PHYSICS LETTERS, vol. 115, no. 22, 27 November 2019 (2019-11-27), pages 222902 - 1-222902-5, XP012242516, DOI: 10.1063/1.5129318
LEDERER, M. ET AL.: "Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD", APPLIED PHYSICS LETTERS, vol. 115, no. 22, 27 November 2019 (2019-11-27), pages 222902 - 1-222902-5, XP012242516, DOI: 10.1063/1.5129318
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