Title:
SEMICONDUCTOR DEVICE, SEMICONDUCTOR CHIP, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/206215
Kind Code:
A1
Abstract:
Provided in the embodiments of the present invention are a semiconductor device, a semiconductor chip, and a method for manufacturing the semiconductor device, the semiconductor device comprising a substrate and a semiconductor layer manufactured on the substrate; a plurality of gate electrodes, a plurality of drain electrodes, and a plurality of source electrodes are manufactured on the side of the semiconductor layer furthest from the substrate, the gate electrodes being positioned between the source electrodes and the drain electrodes, and the gate electrodes, the source electrodes, and the drain electrodes being positioned in an active region of the semiconductor device; a gate interval is formed between any two adjacent gate electrodes, the formed gate intervals comprising at least two unequal gate intervals, the biggest gate interval amongst the gate intervals being positioned in a first preset range determined on the basis of the interval in the gate length direction of the two gate electrodes at the outermost two ends of the semiconductor device and the total number of gate electrodes of the semiconductor device. The embodiments of the present invention can effectively improve the temperature distribution gradient in the semiconductor device, increasing the heat dissipation efficiency in the centre of the device.
Inventors:
PEI YI (CN)
KANG GUOCHUN (CN)
SUN LINLIN (CN)
KANG GUOCHUN (CN)
SUN LINLIN (CN)
Application Number:
PCT/CN2019/084222
Publication Date:
October 31, 2019
Filing Date:
April 25, 2019
Export Citation:
Assignee:
DYNAX SEMICONDUCTOR INC (CN)
International Classes:
H01L29/778
Foreign References:
| CN106815411A | 2017-06-09 | |||
| CN107068739A | 2017-08-18 | |||
| US20110233612A1 | 2011-09-29 | |||
| US20080240194A1 | 2008-10-02 |
Attorney, Agent or Firm:
ZHONGZI LAW OFFICE (CN)
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