SEMICONDUCTOR DEVICE, COMPLEMENTARY SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, WIRELESS COMMUNICATION DEVICE AND PRODUCT TAG

WIPO Patent Application WO/2018/180146

A1

The present invention addresses the problem of providing a semiconductor device having stable n-type semiconductor characteristics without deterioration over time. The purpose of the present invention is to provide a semiconductor device provided with: a substrate; a source electrode, a drain electrode and a gate electrode; a semiconductor layer which contacts the source electrode and the drain electrode; a gate insulation layer which insulates the semiconductor layer from the gate electrode; and a second insulation layer which contacts the semiconductor layer on a side opposite to the gate insulation layer with respect to the semiconductor layer, wherein the semiconductor device is characterized in that the semiconductor layer contains carbon nanotubes, the second insulation layer contains electron-donating compounds including at least any one selected from among nitrogen atoms and phosphorous atoms, and the oxygen permeability of the second insulation layer is equal to or less than 4.0 cc/(m2·24h·atm).

ISOGAI KAZUKI (JP)
MURASE SEIICHIRO (JP)
SAKII DAISUKE (JP)

PCT/JP2018/007469

October 04, 2018

February 28, 2018

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TORAY INDUSTRIES (JP)

H01L21/336; C01B32/158; H01L21/208; H01L21/312; H01L29/786; H01L51/05; H01L51/30

WO2014142105A1	2014-09-18
WO2009139339A1	2009-11-19
WO2008023669A1	2008-02-28
WO2006085611A1	2006-08-17
WO2017130836A1	2017-08-03
WO2009139339A1	2009-11-19

JP2009283924A	2009-12-03
US20030122133A1	2003-07-03

NANO LETTERS, vol. 1, 2001, pages 453 - 456
POLY. ENG. SCI., vol. 14, no. 2, 1974, pages 147 - 154
See also references of EP 3605591A4

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