Title:
SEMICONDUCTOR DEVICE AND CONTROL DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/057011
Kind Code:
A1
Abstract:
Provided is a semiconductor device wherein a field effect transistor is prevented from burning due to a current flowing through a parasitic diode.
This semiconductor device has a configuration comprising: a field effect transistor (3) having a parasitic diode (10); a temperature detector (5) for detecting the temperature of the parasitic diode (10); and a control unit (6) which determines whether the temperature detected by the temperature detector (5) is not less than a first temperature or not, and which turns on the field effect transistor (3) in cases where the detected temperature is determined to be not less than the first temperature.
Inventors:
TSUKAMOTO KATSUMA (JP)
Application Number:
PCT/JP2016/077208
Publication Date:
April 06, 2017
Filing Date:
September 15, 2016
Export Citation:
Assignee:
AUTONETWORKS TECHNOLOGIES LTD (JP)
SUMITOMO WIRING SYSTEMS (JP)
SUMITOMO ELECTRIC INDUSTRIES (JP)
SUMITOMO WIRING SYSTEMS (JP)
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H03K17/08; H03K17/00; H03K17/687
Foreign References:
| JP2001057740A | 2001-02-27 | |||
| JP2015170918A | 2015-09-28 |
Attorney, Agent or Firm:
KOHNO, Hideto et al. (JP)
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