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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE COPPER BONDING WIRE AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/111908
Kind Code:
A1
Abstract:
Provided is copper bonding wire that has improved storage lifespan in the atmosphere. Specifically, semiconductor device copper bonding wire, in which the crystal grain boundary density at the surface is 0.6 (µm/µm2) or more and 1.6 (µm/µm2) or less, is provided.

Inventors:
OISHI RYO (JP)
ODA DAIZO (JP)
ARAKI NORITOSHI (JP)
SHIMOMURA KOTA (JP)
UNO TOMOHIRO (JP)
OYAMADA TETSUYA (JP)
Application Number:
PCT/JP2020/043446
Publication Date:
June 10, 2021
Filing Date:
November 20, 2020
Export Citation:
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Assignee:
NIPPON MICROMETAL CORP (JP)
NIPPON STEEL CHEMICAL & MAT CO LTD (JP)
International Classes:
C22C9/00; C22C9/02; C22C9/04; C22C9/06; C22C9/10; C22F1/00; C22F1/08; H01L21/60
Domestic Patent References:
WO2018212327A12018-11-22
WO2017221770A12017-12-28
Foreign References:
JP2019149559A2019-09-05
JP2013026475A2013-02-04
JP2009140953A2009-06-25
JPS6148543A1986-03-10
JP2018503743A2018-02-08
JP2002246542A2002-08-30
Other References:
See also references of EP 4071256A4
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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