Title:
SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/187936
Kind Code:
A1
Abstract:
This semiconductor device makes it possible to achieve a finer transistor circuit and comprises: a first gate electrode; a first gate insulating layer on the first gate electrode; a first oxide semiconductor layer on the first gate insulating layer; a source electrode and a drain electrode connected to the first oxide semiconductor layer; a second gate insulating layer on the first oxide semiconductor layer; a second oxide semiconductor layer on the second gate insulating layer; a second gate electrode provided on the second oxide semiconductor layer and in contact with the second oxide semiconductor layer; a first insulating layer provided on the second gate electrode and having provided therein part of a first opening that overlaps with the second oxide semiconductor layer in a planar view; and a first connection electrode that electrically connects the first gate electrode and the second gate electrode via the first opening.
Inventors:
TODA TATSUYA (JP)
SASAKI TOSHINARI (JP)
FUCHI MASAYOSHI (JP)
SASAKI TOSHINARI (JP)
FUCHI MASAYOSHI (JP)
Application Number:
PCT/JP2019/007661
Publication Date:
October 03, 2019
Filing Date:
February 27, 2019
Export Citation:
Assignee:
JAPAN DISPLAY INC (JP)
International Classes:
H01L29/786; G09F9/30; H01L27/32; H01L51/50; H05B33/02
Foreign References:
| JP2017028252A | 2017-02-02 | |||
| JP2016178299A | 2016-10-06 | |||
| JP2017028288A | 2017-02-02 |
Attorney, Agent or Firm:
TAKAHASHI, HAYASHI AND PARTNER PATENT ATTORNEYS, INC. (JP)
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