Title:
SEMICONDUCTOR DEVICE DRIVING METHOD AND DRIVING DEVICE, AND POWER CONVERSION APPARATUS
Document Type and Number:
WIPO Patent Application WO/2022/249297
Kind Code:
A1
Abstract:
This semiconductor device is on/off controlled by controlling a gate voltage in response to a drive control signal (Ssw). In a turn-on operation for charging a gate in response to the transition of the drive control signal (Ssw) from a first level (0) to a second level (1), at a first time (t1) after the end of a mirror period (200) of a gate voltage (Vg), a drive signal (Sdr) is set to the first level (0) to discharge the gate, thereby providing a voltage drop period (210) in which the gate voltage (Vg) is temporarily dropped. At a second time (t2), the drive signal (Sdr) is again set to the second level (1) to start charging the gate.
Inventors:
IMAMURA YASUTAKA (JP)
MITSUI YOHEI (JP)
WADA YUKIHIKO (JP)
MIKI TAKAYOSHI (JP)
MITSUI YOHEI (JP)
WADA YUKIHIKO (JP)
MIKI TAKAYOSHI (JP)
Application Number:
PCT/JP2021/019856
Publication Date:
December 01, 2022
Filing Date:
May 25, 2021
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H03K17/08; H02M1/08; H02M7/48; H03K17/16
Domestic Patent References:
| WO2018198426A1 | 2018-11-01 |
Foreign References:
| JP2017070164A | 2017-04-06 | |||
| JP2018113809A | 2018-07-19 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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