Title:
SEMICONDUCTOR DEVICE AND ELECTRIC APPARATUS HAVING SAID SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/152522
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a semiconductor device having a novel structure. This semiconductor device comprises: a first element layer having a first memory cell; a second element layer having a second memory cell; and a silicon substrate having a drive circuit. The first element layer is provided between the silicon substrate and the second element layer. The first memory cell has a first transistor and a first capacitor. The second memory cell has a second transistor and a second capacitor. One among a source and a drain of the first transistor and one among a source and a drain of the second transistor are electrically connected to a wiring for electrically connecting to a drive circuit. The wiring is in contact with the first semiconductor layer of the first transistor and the second semiconductor layer of the second transistor, and is provided in a vertical direction or a substantially vertical direction with respect to the surface of the silicon substrate.
Inventors:
ONUKI TATSUYA (JP)
YAKUBO YUTO (JP)
OKAMOTO YUKI (JP)
SAITO SEIYA (JP)
KATO KIYOSHI (JP)
YAMAZAKI SHUNPEI (JP)
YAKUBO YUTO (JP)
OKAMOTO YUKI (JP)
SAITO SEIYA (JP)
KATO KIYOSHI (JP)
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2019/059906
Publication Date:
July 30, 2020
Filing Date:
November 19, 2019
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/8234; H01L21/8242; H01L27/06; H01L27/088; H01L27/108; H01L29/786
Foreign References:
| JP2013065638A | 2013-04-11 | |||
| JP2016192578A | 2016-11-10 | |||
| JP2000312006A | 2000-11-07 |
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