Title:
SEMICONDUCTOR DEVICE, ELECTRIC POWER CONVERTER AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/171666
Kind Code:
A1
Abstract:
This semiconductor device (1) is provided with an insulated circuit board (10) and an insulating layer (14). The insulated circuit board (10) comprises a first conductor layer (12). The first conductor layer (12) comprises a main body part (15) and a projected part (16). The insulating layer (14) is formed on a fourth main surface (15b) and a first lateral surface (15c) of the main body part (15) and a sixth main surface (16b) and a second lateral surface (16c) of the projected part (16). The third thickness (t3) of the insulating layer (14) at a first projected corner part (15d), the fourth thickness (t4) of the insulating layer (14) at a second projected corner part (16d) and the fifth thickness (t5) of the insulating layer (14) at a third projected corner part (16e) are larger than the sixth thickness (t6) of the insulating layer (14) on the fourth main surface (15b). Consequently, the dielectric breakdown voltage of this semiconductor device (1) is able to be increased.
Inventors:
KOSUGI AKIRA (JP)
SAWAKAWA MAO (JP)
SAWAKAWA MAO (JP)
Application Number:
PCT/JP2018/042867
Publication Date:
September 12, 2019
Filing Date:
November 20, 2018
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L25/07; H01L21/56; H01L23/12; H01L23/29; H01L23/31; H01L23/36; H01L25/18
Foreign References:
| JP2015115383A | 2015-06-22 | |||
| JP2010103311A | 2010-05-06 | |||
| JPH11340374A | 1999-12-10 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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