Title:
SEMICONDUCTOR DEVICE AND ELECTRICAL DEVICE PROVIDED WITH SAME
Document Type and Number:
WIPO Patent Application WO/2020/170067
Kind Code:
A1
Abstract:
Provided is a new semiconductor device. The semiconductor device includes a drive circuit and first to third transistor layers. The first transistor layer includes a first memory cell including a first transistor and a first capacitor. The second transistor layer includes a second memory cell including a second transistor and a second capacitor. The third transistor layer includes a switching circuit and an amplifier circuit. The first transistor is electrically connected to a first local bit line. The second transistor is electrically connected to a second local bit line. The switching circuit has the function of selecting one of the first local bit line and the second local bit line and electrically connecting the selected local bit line to the amplifier circuit. The first to third transistor layers are provided on a silicon substrate. The third transistor layer is provided between the first transistor layer and the second transistor layer.
Inventors:
ONUKI TATSUYA (JP)
YAKUBO YUTO (JP)
SAITO SEIYA (JP)
YAKUBO YUTO (JP)
SAITO SEIYA (JP)
Application Number:
PCT/IB2020/051040
Publication Date:
August 27, 2020
Filing Date:
February 11, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
G11C5/02; G11C7/18; G11C8/10; G11C11/408; H01L21/8234; H01L21/8242; H01L27/088; H01L27/108; H01L29/786
Domestic Patent References:
| WO2016181256A1 | 2016-11-17 |
Foreign References:
| JP2009071313A | 2009-04-02 | |||
| JP2001185700A | 2001-07-06 | |||
| JP2010263211A | 2010-11-18 |
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