Title:
SEMICONDUCTOR DEVICE, ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2021/038363
Kind Code:
A1
Abstract:
Provided is a semiconductor device that has a novel configuration. A semiconductor device that has a memory module. The memory module has a first memory cell, first wiring, and second wiring and third wiring that include a metal oxide. The first memory cell has a reading transistor and a rewriting transistor. The first wiring has a region that functions as a back gate for the reading transistor and a region that makes the second wiring function as a conductor. The second wiring has a region that functions as a channel formation region for the reading transistor, a region that functions as a back gate for the rewriting transistor, and a region that makes the third wiring function as a conductor. The third wiring has a region that functions as a channel formation region for the rewriting transistor and a region that functions as a conductor.
Inventors:
KIMURA HAJIME (JP)
ONUKI TATSUYA (JP)
KUNITAKE HITOSHI (JP)
ONUKI TATSUYA (JP)
KUNITAKE HITOSHI (JP)
Application Number:
PCT/IB2020/057716
Publication Date:
March 04, 2021
Filing Date:
August 17, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/8234; G11C11/404; G11C11/405; H01L21/336; H01L21/8242; H01L27/06; H01L27/088; H01L27/108; H01L27/11556; H01L27/1156; H01L29/786; H01L29/788; H01L29/792
Foreign References:
| JP2019008862A | 2019-01-17 | |||
| JP2017168809A | 2017-09-21 | |||
| JP2018157208A | 2018-10-04 | |||
| JP2018206828A | 2018-12-27 |
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