Title:
SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, AND METHOD FOR FORMING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/222046
Kind Code:
A1
Abstract:
The embodiments of the present application relate to the technical field of semiconductors. Provided are a semiconductor device, an electronic device, and a method for forming a semiconductor device. The method for forming a semiconductor device has higher compatibility with existing processes. The semiconductor device comprises a substrate, and a nucleation layer, which is arranged on the substrate, wherein the substrate is a substrate containing silicon. The nucleation layer contains P-type impurities which can be combined with hydrogen, wherein the P-type impurities contain an element in group II, which, for example, may comprise magnesium, calcium, etc. In addition, the substrate contains a first substance, wherein the first substance comprises a substance obtained by means of combining an element in group IIIA and hydrogen, for example, the first substance may be a substance obtained by means of combining Al and hydrogen. Since there is a first substance in a substrate, the formation of a P-type parasitic channel is further inhibited.
Inventors:
DUAN HUANTAO (CN)
NI RUXUE (CN)
NI RUXUE (CN)
Application Number:
PCT/CN2021/088523
Publication Date:
October 27, 2022
Filing Date:
April 20, 2021
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/778; H01L21/335
Foreign References:
| CN109599437A | 2019-04-09 | |||
| CN110875387A | 2020-03-10 | |||
| CN108110048A | 2018-06-01 | |||
| CN112436056A | 2021-03-02 | |||
| CN103715242A | 2014-04-09 | |||
| CN106257686A | 2016-12-28 | |||
| US20070190758A1 | 2007-08-16 |
Attorney, Agent or Firm:
BEIJING ZBSD PATENT & TRADEMARK AGENT LTD. (CN)
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