Title:
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2021/035572
Kind Code:
A1
Abstract:
A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a semiconductor structure and an input/output pad. The semiconductor structure includes a first substrate and a conductive layer, in which the first substrate has a first surface and a second surface opposite to each other, the conductive layer is disposed on the first surface of the first substrate, and the conductive layer includes one or more first trace. The first semiconductor structure has a recess penetrating the first substrate and exposing the one or more first trace, and the input/output pad is disposed on the one or more first trace and in the recess.
Inventors:
CHEN HE (CN)
HUA ZIQUN (CN)
WU SHU (CN)
WANG YONGQING (CN)
XIAO LIANG (CN)
HUA ZIQUN (CN)
WU SHU (CN)
WANG YONGQING (CN)
XIAO LIANG (CN)
Application Number:
PCT/CN2019/103021
Publication Date:
March 04, 2021
Filing Date:
August 28, 2019
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L23/535; H01L21/768; H01L23/48; H01L27/115
Foreign References:
| CN109155320A | 2019-01-04 | |||
| CN104752382A | 2015-07-01 | |||
| US20160163732A1 | 2016-06-09 | |||
| US20140346668A1 | 2014-11-27 | |||
| US20070190692A1 | 2007-08-16 |
Other References:
See also references of EP 3915145A4
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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