Title:
SEMICONDUCTOR DEVICE FABRICATION METHOD AND FABRICATION APPARATUS
Document Type and Number:
WIPO Patent Application WO/2021/039271
Kind Code:
A1
Abstract:
The present invention includes: a quartz vessel inside which a body to be processed, containing a semiconductor, is to be disposed; a heating part that generates heat; and a radiation control body disposed between the quartz vessel and the heating part, wherein the radiation control body is configured to radiate, when heated by the heating part, a radiation wave having a wavelength that passes through the quartz vessel to allow the radiation wave to reach the body to be processed, containing the semiconductor, in the quartz vessel.
Inventors:
MURATA HITOSHI (JP)
KUNII YASUO (JP)
UENO MASAAKI (JP)
SUEMITSU MASAHIRO (JP)
KUNII YASUO (JP)
UENO MASAAKI (JP)
SUEMITSU MASAHIRO (JP)
Application Number:
PCT/JP2020/029325
Publication Date:
March 04, 2021
Filing Date:
July 30, 2020
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
OSAKA GAS CO LTD (JP)
OSAKA GAS CO LTD (JP)
International Classes:
H01L21/31; C23C16/46
Domestic Patent References:
| WO2018182013A1 | 2018-10-04 |
Foreign References:
| JPH0778830A | 1995-03-20 | |||
| JP2015158995A | 2015-09-03 | |||
| JP2014158009A | 2014-08-28 |
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
Download PDF:
Previous Patent: DEVICE FOR PRODUCING AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Next Patent: STRUCTURAL MEMBER
Next Patent: STRUCTURAL MEMBER