SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR SAME

Title:

SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR SAME

Document Type and Number:

WIPO Patent Application WO/2013/018783

Kind Code:

A1

Abstract:

[Problem] To provide a semiconductor device having an electrical insulating layer with excellent heat resistance, heat dissipation characteristics, and durability and that can also be fabricated with a process that is highly efficient and has excellent cost characteristics. [Solution] A semiconductor device provided with the following: a first substrate to which a semiconductor chip is mounted directly or indirectly, and a white colored insulating layer that is formed on the first substrate and functions as a reflecting material, wherein the semiconductor chip is an LED, at least the surface of the first substrate is made of metal, and a laminated structure comprising a white colored insulating layer and a metal layer is formed on the surface of the first substrate by applying a liquid material containing SiO2 in the form of nanoparticles and a white inorganic pigment and then firing the liquid material. Preferably, the ratio of SiO2 and white inorganic pigment contained in the aforementioned white insulating layer after firing is 80% by weight or greater.

Inventors:

ISHIHARA MASAMICHI (JP)
OYAMA KENSHU (JP)
MURAKAMI SHOJI (JP)
ONOSAKA HITONOBU (JP)

Application Number:

PCT/JP2012/069390

Publication Date:

February 07, 2013

Filing Date:

July 31, 2012

Export Citation:

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Assignee:

STEQ INC (JP)
SSTECHNO INC (JP)
SHIKOKU INSTRUMENTATION CO LTD (JP)
ISHIHARA MASAMICHI (JP)
OYAMA KENSHU (JP)
MURAKAMI SHOJI (JP)
ONOSAKA HITONOBU (JP)

International Classes:

H01L33/60; H01L23/12; H01L33/62

Domestic Patent References:

WO2009008509A1

2009-01-15

Foreign References:

JP2009004718A	2009-01-08
JP2005167086A	2005-06-23
JP2006245032A	2006-09-14
JPH1168269A	1999-03-09
JP2007083723A	2007-04-05
JP4904604B1	2012-03-28

Other References: