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Title:
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2020/192689
Kind Code:
A1
Abstract:
The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a barrier layer disposed above the substrate, and a dielectric layer disposed on the barrier layer and defining a first recess. The semiconductor device further includes a spacer disposed within the first recess and a gate disposed between a first portion of the spacer and a second portion of the spacer, wherein the gate defining another recess.

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Inventors:
WONG KING YUEN (CN)
Application Number:
PCT/CN2020/081115
Publication Date:
October 01, 2020
Filing Date:
March 25, 2020
Export Citation:
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Assignee:
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD (CN)
International Classes:
H01L29/778; H01L21/335
Foreign References:
CN109841677A2019-06-04
US20120261720A12012-10-18
US20120261720A12012-10-18
CN108461543A2018-08-28
CN107170809A2017-09-15
CN103426914A2013-12-04
CN1175086A1998-03-04
US20140264713A12014-09-18
US20150325650A12015-11-12
US20140054598A12014-02-27
Attorney, Agent or Firm:
LEE AND LI - LEAVEN IPR AGENCY LTD. (CN)
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