Title:
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2022/000472
Kind Code:
A1
Abstract:
A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a III-V material layer (11), a first gate (12), a second gate (13), and a first passivation layer (14). The first gate (12) and the second gate (13) are on the III-V material layer (11). The first passivation layer (14) is on the first gate (12).A first activation ratio of an element in the first gate (12) is different from a second activation ratio of the element in the second gate (13).
Inventors:
ZHAO QIYUE (CN)
GAO WUHAO (CN)
CHEN ZU ER (CN)
GAO WUHAO (CN)
CHEN ZU ER (CN)
Application Number:
PCT/CN2020/100142
Publication Date:
January 06, 2022
Filing Date:
July 03, 2020
Export Citation:
Assignee:
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD (CN)
International Classes:
H01L27/085; H01L21/8232
Foreign References:
| CN111129008A | 2020-05-08 | |||
| US20170179272A1 | 2017-06-22 | |||
| CN108701712A | 2018-10-23 | |||
| CN104393045A | 2015-03-04 | |||
| CN110085675A | 2019-08-02 | |||
| CN110021661A | 2019-07-16 |
Attorney, Agent or Firm:
IDEA INTELLECTUAL (SHENZHEN) IP AGENCY (CN)
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