Title:
SEMICONDUCTOR DEVICE AND FORMING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/088993
Kind Code:
A1
Abstract:
Provided are a semiconductor device and a forming method therefor. A first light resistance layer with a vertical or near-vertical side wall is used to precisely control a formed sacrificial part, thereby being conducive to precisely controlling the width size of a finally formed suspended part in a horizontal direction; and the first light resistance layer is further used to execute a stripping process so as to form an upper electrode layer, thereby effectively preventing the upper electrode layer and the sacrificial part from suffering surface damage. Moreover, forming the sacrificial part and the upper electrode layer on the basis of the same light resistance layer also facilitates the abutting of an end part of the upper electrode layer against an end part of the sacrificial part in a self-aligning manner, thereby further improving the control precision of the morphology of the finally formed suspended part.
Inventors:
MU YUANLONG (CN)
SHAN WEIZHONG (CN)
WANG CHONG (CN)
WANG DAJIA (CN)
WEI YOUCHEN (CN)
SHAN WEIZHONG (CN)
WANG CHONG (CN)
WANG DAJIA (CN)
WEI YOUCHEN (CN)
Application Number:
PCT/CN2021/116554
Publication Date:
May 05, 2022
Filing Date:
September 03, 2021
Export Citation:
Assignee:
SEMICONDUCTOR MFG ELECTRONICS SHAOXING CO LTD (CN)
International Classes:
H03H9/64; H03H9/17
Foreign References:
| CN112104335A | 2020-12-18 | |||
| CN111740007A | 2020-10-02 | |||
| CN111740006A | 2020-10-02 | |||
| US20020067106A1 | 2002-06-06 |
Attorney, Agent or Firm:
SHANGHAI SAVVY INTELLECTUAL PROPERTY AGENCY (CN)
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