Title:
SEMICONDUCTOR DEVICE HAVING FERROELECTRIC ELEMENT
Document Type and Number:
WIPO Patent Application WO/2007/116433
Kind Code:
A1
Abstract:
A semiconductor device having a ferroelectric film, comprising a first conductive
layer, an interlayer insulating film superimposed on the first conductive layer
and a second conductive layer superimposed on the interlayer insulating film,
wherein within the interlayer insulating film, there are disposed multiple
block layers capable of inhibiting of hydrogen or moisture migration. There
is provided a contact plug fitted to the interlayer insulating film and effecting
connection between the first and second conductive layers, which contact plug
is furnished with a glue layer including a titanium film and a metal nitride film
or metal silicide film and, superimposed on the glue layer, a tungsten plug layer.
The glue layer enhances the adhesion with side wall of the interlayer insulating
film and also enhances the mechanical strength thereof, so that there can be inhibited
release of hydrogen gas from the side wall of the interlayer insulating film and
suppressed failure of the contact plug.
Inventors:
KIKUCHI HIDEAKI (JP)
NAGAI KOUICHI (JP)
WANG WENSHENG (JP)
NAGAI KOUICHI (JP)
WANG WENSHENG (JP)
Application Number:
PCT/JP2006/306625
Publication Date:
October 18, 2007
Filing Date:
March 30, 2006
Export Citation:
Assignee:
FUJITSU LTD (JP)
KIKUCHI HIDEAKI (JP)
NAGAI KOUICHI (JP)
WANG WENSHENG (JP)
KIKUCHI HIDEAKI (JP)
NAGAI KOUICHI (JP)
WANG WENSHENG (JP)
International Classes:
H01L27/105; H01L21/8246
Foreign References:
JP2002280528A | 2002-09-27 | |||
JP2005353838A | 2005-12-22 |
Attorney, Agent or Firm:
DOI, Kenji et al. (Doi & Associates3rd Floor, Toshou-Bldg. No.3,3-9-5, Shin-yokohama,Kohoku-ku, Yokohama-shi, Kanagawa 33, JP)
Download PDF: