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Title:
SEMICONDUCTOR DEVICE HAVING FERROELECTRIC ELEMENT
Document Type and Number:
WIPO Patent Application WO/2007/116433
Kind Code:
A1
Abstract:
A semiconductor device having a ferroelectric film, comprising a first conductive layer, an interlayer insulating film superimposed on the first conductive layer and a second conductive layer superimposed on the interlayer insulating film, wherein within the interlayer insulating film, there are disposed multiple block layers capable of inhibiting of hydrogen or moisture migration. There is provided a contact plug fitted to the interlayer insulating film and effecting connection between the first and second conductive layers, which contact plug is furnished with a glue layer including a titanium film and a metal nitride film or metal silicide film and, superimposed on the glue layer, a tungsten plug layer. The glue layer enhances the adhesion with side wall of the interlayer insulating film and also enhances the mechanical strength thereof, so that there can be inhibited release of hydrogen gas from the side wall of the interlayer insulating film and suppressed failure of the contact plug.

Inventors:
KIKUCHI HIDEAKI (JP)
NAGAI KOUICHI (JP)
WANG WENSHENG (JP)
Application Number:
PCT/JP2006/306625
Publication Date:
October 18, 2007
Filing Date:
March 30, 2006
Export Citation:
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Assignee:
FUJITSU LTD (JP)
KIKUCHI HIDEAKI (JP)
NAGAI KOUICHI (JP)
WANG WENSHENG (JP)
International Classes:
H01L27/105; H01L21/8246
Foreign References:
JP2002280528A2002-09-27
JP2005353838A2005-12-22
Attorney, Agent or Firm:
DOI, Kenji et al. (Doi & Associates3rd Floor, Toshou-Bldg. No.3,3-9-5, Shin-yokohama,Kohoku-ku, Yokohama-shi, Kanagawa 33, JP)
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