Title:
SEMICONDUCTOR DEVICE HAVING HIGH-QUALITY EPITAXIAL LAYER AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2017/096780
Kind Code:
A1
Abstract:
Disclosed are a semiconductor device having a high-quality epitaxial layer and a method for manufacturing same. The semiconductor device can comprise: a substrate (1001); a fin-shaped first semiconductor layer (1005) spaced from the substrate (1001), the first semiconductor layer (1005) extending along the bended longitudinal extension direction; and a second semiconductor layer (1023) at least partially surrounding the outer periphery of the first semiconductor layer (1005).
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Inventors:
ZHU HUILONG (US)
Application Number:
PCT/CN2016/087244
Publication Date:
June 15, 2017
Filing Date:
June 27, 2016
Export Citation:
Assignee:
INST OF MICROELECTRONICS CAS (CN)
International Classes:
H01L21/336; H01L29/78
Foreign References:
| CN105633167A | 2016-06-01 | |||
| US20160172359A1 | 2016-06-16 | |||
| CN103456638A | 2013-12-18 | |||
| CN101339947A | 2009-01-07 |
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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