SEMICONDUCTOR DEVICE HAVING INSULATING FILM OF FLUORINE-ADDED CARBON FILM AND METHOD OF PRODUCING THE SAME

Title:

SEMICONDUCTOR DEVICE HAVING INSULATING FILM OF FLUORINE-ADDED CARBON FILM AND METHOD OF PRODUCING THE SAME

Document Type and Number:

WIPO Patent Application WO/1999/035684

Kind Code:

A1

Abstract:

A semiconductor device comprising an insulating film which is a fluorine-added carbon film formed on a substrate, a metal layer formed on the fluorine-added carbon film, and a strong adherence layer formed between the insulating film and the metal layer. The strong adherence layer is made of a compound containing carbon and the metal (the same metal contained in the metal layer), and prevents the metal layer from separating from the fluorine-added carbon film.

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Inventors:

AKAHORI TAKASHI (JP)
SUZUKI AKIRA (JP)

Application Number:

PCT/JP1999/000034

Publication Date:

July 15, 1999

Filing Date:

January 08, 1999

Export Citation:

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Assignee:

TOKYO ELECTRON LTD (JP)
AKAHORI TAKASHI (JP)
SUZUKI AKIRA (JP)

International Classes:

C23C16/26; C23C16/30; C23C16/56; H01L21/312; H01L21/768; (IPC1-7): H01L21/768; H01L21/314

Foreign References:

JPH08264648A	1996-10-11
JPH09246242A	1997-09-19
JPH1116918A	1999-01-22
JPH10335461A	1998-12-18

Other References: