Title:
SEMICONDUCTOR DEVICE HAVING POLYSILICON FIELD PLATE FOR POWER MOSFETS
Document Type and Number:
WIPO Patent Application WO/2019/178765
Kind Code:
A1
Abstract:
A semiconductor device (100) includes a substrate (102) including a semiconductor surface layer (102a). A field plate (FP) (112) includes a trench in the semiconductor surface layer filled with a single polysilicon layer (122) positioned on at least one side of a power metal-oxide-semiconductor field effect transistor (power MOSFET) 106. The power MOSFET includes a dielectric liner lining a sidewall of the trench under the polysilicon layer including a second dielectric liner (142) on a first dielectric liner (140). An upper portion of the dielectric liner has a lower dielectric thickness as compared to a dielectric thickness on its lower portion. The single polysilicon layer extends continuously over the dielectric liner along both the lower portion and the upper portion. The power MOSFET includes a drain including a drain contact (108) below a vertical drift region (110) in the semiconductor surface layer, and a gate (126), body (124) and a source (130) above the vertical drift region.
Inventors:
YANG HONG (US)
LI PENG (CN)
SRIDHAR SEETHARAMAN (US)
LIU YUNLONG (CN)
LIU RUI (CN)
CHEN YAPING (CN)
LI PENG (CN)
SRIDHAR SEETHARAMAN (US)
LIU YUNLONG (CN)
LIU RUI (CN)
CHEN YAPING (CN)
Application Number:
PCT/CN2018/079803
Publication Date:
September 26, 2019
Filing Date:
March 21, 2018
Export Citation:
Assignee:
TEXAS INSTRUMENTS INC (US)
TEXAS INSTRUMENTS JAPAN LTD (JP)
TEXAS INSTRUMENTS JAPAN LTD (JP)
International Classes:
H01L29/78; H01L21/336; H01L27/088
Foreign References:
| CN105009296A | 2015-10-28 | |||
| CN107710418A | 2018-02-16 | |||
| CN104051461A | 2014-09-17 | |||
| US20150357461A1 | 2015-12-10 |
Attorney, Agent or Firm:
LEE AND LI - LEAVEN IPR AGENCY LTD. (CN)
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