SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR THIN-FILMS OF DIFFERENT CRYSTALLINITIES, SUBSTRATE THEREOF, PROCESS FOR PRODUCING THESE, LIQUID CRYSTAL DISPLAY UNIT AND PROCESS FOR PRODUCING THE SAME

WIPO Patent Application WO/2003/088331

A1

A process for producing a substrate of thin-film semiconductor device, comprising a step of forming a non-single-crystal semiconductor thin-film on a base layer and an annealing step of irradiating the non-single-crystal semiconductor thin-film with energy rays so that the crystallinity of the non-single-crystal semiconductor constituting the non-single-crystal semiconductor thin-film is increased. In the annealing step, a multiplicity of unit regions each having at least one irradiation region irradiated with energy rays and at least one non-irradiation region not irradiated with energy rays are formed by simultaneously irradiating the non-single-crystal semiconductor thin-film with a plurality of energy rays.

KIMURA YOSHINOBU (JP)
MATSUMURA MASAKIYO (JP)
YAMAMOTO YOSHITAKA (JP)
NISHITANI MIKIHIKO (JP)
HIRAMATSU MASATO (JP)
JYUMONJI MASAYUKI (JP)
NAKANO FUMIKI (JP)

PCT/JP2003/004717

October 23, 2003

April 14, 2003

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ADV LCD TECH DEV CT CO LTD (JP)
KIMURA YOSHINOBU (JP)
MATSUMURA MASAKIYO (JP)
YAMAMOTO YOSHITAKA (JP)
NISHITANI MIKIHIKO (JP)
HIRAMATSU MASATO (JP)
JYUMONJI MASAYUKI (JP)
NAKANO FUMIKI (JP)

H01L21/20; H01L21/336; H01L29/786; (IPC1-7): H01L21/20; H01L29/786

JPH06104432A	1994-04-15
EP0650197A2	1995-04-26
JPH06102530A	1994-04-15
US5712652A	1998-01-27
JPH09191114A	1997-07-22
JPH0346374A	1991-02-27
JP2002132184A	2002-05-09

Suzuye, Takehiko c/o SUZUYE & SUZUYE 7-2 (Kasumigaseki 3-chome Chiyoda-ku, Tokyo, JP)

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