Title:
SEMICONDUCTOR DEVICE, HIGH-FREQUENCY POWER AMPLIFIER, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/064431
Kind Code:
A1
Abstract:
In order to achieve low impedance of leads connected to a semiconductor device, while exhibiting an anchor effect, this semiconductor device comprises a heat sink (101), a semiconductor element (102), a lead (104) positioned above the heat sink, and a molding (109) formed so as to cover the lead, the heat sink, and the semiconductor element. The edge portion of the lower surface of the heat sink which overlaps with the lead in a plan view has formed thereupon a first protrusion (101a) which protrudes further than the edge portion of the upper surface at said position, and the edge part of the upper surface of the heat sink which does not overlap with the lead in plan view has formed thereupon a second protrusion (101c) which protrudes further than the edge portion of the lower surface at said position.
Inventors:
ASADA TOMOYUKI (JP)
NOGAMI YOICHI (JP)
HORIGUCHI KENICHI (JP)
YAMABE SHIGEO (JP)
MIHO SATOSHI (JP)
MUKAI KENJI (JP)
NOGAMI YOICHI (JP)
HORIGUCHI KENICHI (JP)
YAMABE SHIGEO (JP)
MIHO SATOSHI (JP)
MUKAI KENJI (JP)
Application Number:
PCT/JP2017/035233
Publication Date:
April 04, 2019
Filing Date:
September 28, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L23/29
Foreign References:
| JP2015053346A | 2015-03-19 | |||
| JP2016046467A | 2016-04-04 | |||
| JP2005328015A | 2005-11-24 | |||
| JP2002343906A | 2002-11-29 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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