Title:
SEMICONDUCTOR DEVICE AND IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/010024
Kind Code:
A1
Abstract:
Provided are a semiconductor device which can reduce the substrate bias effect, and an imaging device which uses this semiconductor device. The semiconductor device comprises: a semiconductor substrate; and a field effect transistor provided on a first principal surface side of the semiconductor substrate. The field effect transistor has: a semiconductor region where a channel is formed; a gate electrode that covers the semiconductor region; a gate insulating film disposed between the semiconductor region and the gate electrode; and a first insulating film disposed between the semiconductor region and the semiconductor substrate. The semiconductor region has: an upper surface; a first side surface located on one side of the upper surface, in a first direction which is parallel to the upper surface; and a second side surface located on the other side of the upper surface, in the first direction. The gate electrode has: a first site that faces the upper surface via the gate insulating film; a second site that faces the first side surface via the gate insulating film; and a third site that faces the second side surface via the gate insulating film.
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Inventors:
KIMIZUKA NAOHIKO (JP)
Application Number:
PCT/JP2020/020667
Publication Date:
January 21, 2021
Filing Date:
May 26, 2020
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L29/78; H01L21/336; H01L27/146; H01L29/786; H04N5/374
Foreign References:
| JP2016502756A | 2016-01-28 | |||
| JPH05198817A | 1993-08-06 | |||
| JP2012216776A | 2012-11-08 | |||
| JP2006121093A | 2006-05-11 | |||
| JP2014135353A | 2014-07-24 | |||
| US20170338322A1 | 2017-11-23 | |||
| JP2007158139A | 2007-06-21 |
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
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