SEMICONDUCTOR DEVICE INCLUDING LATERAL INSULATOR

Title:

SEMICONDUCTOR DEVICE INCLUDING LATERAL INSULATOR

Document Type and Number:

WIPO Patent Application WO/2022/032566

Kind Code:

A1

Abstract:

A semiconductor device (300), and methods of forming the same. In one example, the semiconductor device (300) includes a trench (305) in a substrate (310) having a top surface (302), and a shield (330) within the trench (305). The semiconductor device (300) also includes a shield liner (315) between a sidewall of the trench (305) and the shield (330), and a lateral insulator (345) over the shield (330) contacting the shield liner (315). The semiconductor device (300) also includes a gate dielectric layer (350) on an exposed sidewall of the trench (305) between the lateral insulator (345) and the top surface (302). The lateral insulator (345) may have a minimum thickness at least two times thicker than a maximum thickness of the gate dielectric layer (350).

Inventors:

MA FEI (CN)
CHEN YAPING (CN)
LIU YUNLONG (CN)
YANG HONG (US)
YANG SHENGPIN (CN)
NIU BAOQIANG (CN)
LIU RUI (CN)
FENG ZHIPENG (CN)
SRIDHAR SEETHARAMAN (US)
KIM SUNGLYONG (US)

Application Number:

PCT/CN2020/108857

Publication Date:

February 17, 2022

Filing Date:

August 13, 2020

Export Citation:

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Assignee:

TEXAS INSTRUMENTS INC (US)
TEXAS INSTRUMENTS JAPAN LTD (JP)

International Classes:

H01L21/336; H01L29/78

Domestic Patent References:

WO2003103056A2	2003-12-11
WO2009026174A1	2009-02-26

Foreign References:

CN101785091A	2010-07-21
CN105355560A	2016-02-24
CN101740394A	2010-06-16
CN106298949A	2017-01-04
CN107710418A	2018-02-16
US20200075758A1	2020-03-05
US20200044078A1	2020-02-06
CN105355548A	2016-02-24
US20130256786A1	2013-10-03
US201816042834A	2018-07-23
US201916546499A	2019-08-21

Other References: