SEMICONDUCTOR DEVICE FOR INDIRECT DETECTION OF ELECTROMAGNETIC RADIATION AND METHOD OF PRODUCTION

Scintillators are used in semiconductor imaging devices for an indirect detection of high-energy electromagnetic or ionizing radiation, such as x-rays and gamma-rays, in various applications including medical imaging applications, for example. Incident high-energy radiation is transformed to electromagnetic radiation in the visible spectrum, which can be detected by conventional photodiodes.

Nanodots are small particles having dimensions of typically several nanometres. When electricity or light is applied to them, they emit light of specific wavelengths depending on the size, shape and material of the nanodots. Nanorods are small particles of elongated shape. Nanowires are small particles of elongated shape that in one axis extend

substantially longer than their diameter. A layer of aligned nanorods or nanowires emits polarized light.

US 2007/0158573 Al discloses an x-ray detector comprising a plurality of detector elements, each of which includes a first scintillator layer converting x-rays into light of a first wavelength and a second scintillator layer converting x-rays that have passed through the first scintillator layer into light of a second wavelength. US 7 403 589 Bl discloses a computed tomography (CT) detector with photomultiplier and scintillator to convert x-rays to optical photons. US 2010/0193700 Al discloses a spectral photon counting detector comprising a radiation sensitive detector including a scintillator in optical communication with a photosensor. US 2010/0200760 Al discloses a radiation detector comprising a stack of scintillator elements and photodiode arrays.

US 2011/0216878 Al discloses a spectral processor with first and second processing channels deriving first and second spectral signals from a detector signal to obtain a spectral resolution of the detector signal.

US 2013/0187053 Al discloses a digital quantum dot

radiographic detection system including a scintillation subsystem and a detection subsystem.

US 2013/0248729 Al discloses an x-ray detector wherein the detector elements use a sensor material that converts incident photons directly into charge carriers moving freely in the sensor material. A circuit determines the number of photons in relation to predefined energy ranges. The total electrical power of a detector element is kept constant.

US 2013/0292574 Al discloses a CT detector array with at least one thin photosensor array layer disposed between at least two scintillator array layers.

WO 2017/025888 Al discloses an imaging system for computed tomography, which comprises a radiation sensitive detector array including detector pixels with an optically transparent encapsulate material with particles supporting different scintillation materials. Each scintillation material is in the form of a nanometer to micrometer quantum dot. US 2017/0031211 Al discloses a method of fabricating a quantum rod layer and a display device including the same. It is an object of the present invention to present a new semiconductor device for indirect detection of high-energetic electromagnetic radiation that has small dimensions and is suitable for mass fabrication. It is a further object to present a method of producing such a semiconductor device.

These objects are achieved with the semiconductor device for detection of electromagnetic radiation according to claim 1 and with the method of producing a semiconductor device for detection of electromagnetic radiation according to claim 13. Embodiments and variants derive from the dependent claims.

The semiconductor device for detection of electromagnetic radiation comprises a substrate of semiconductor material having a main surface, an integrated circuit in the

substrate, and a photodetector element or array of

photodetector elements arranged at or above the main surface. A nanomaterial film, which may particularly comprise

nanodots, nanorods or nanowires or any combination thereof, is applied on top of the semiconductor device. A dielectric layer is optionally arranged between the nanomaterial film and the photodetector element or array of photodetector elements. At least part of the nanomaterial film has a scintillating property. The semiconductor device is especially intended for detection of high-energy electromagnetic radiation or ionizing

radiation. The scintillating property means that high-energy electromagnetic radiation or ionizing radiation is transformed to electromagnetic radiation within a range of wavelengths that typically extends from 300 nm to about

1000 nm, including visible light. The range of wavelengths may particularly match the absorption spectrum of silicon.

An embodiment of the semiconductor device comprises a further nanomaterial film. At least part of the further nanomaterial film has an absorbing property and covers an area of the main surface that is outside the area of the photodetector element or array of photodetector elements. Thus no photodetector element is covered with an absorbing layer. The further nanomaterial film may comprise nanodots, nanorods or

nanowires or any combination thereof. A further embodiment of the semiconductor device comprises at least two photodetector elements and at least one further nanomaterial film, at least part of which has a scintillating property. Each photodetector element is covered by the nanomaterial film or by such a further nanomaterial film.

In a further embodiment, the nanomaterial film and at least one further nanomaterial film are matched to two different electromagnetic energy levels. In a further embodiment, the nanomaterial film and at least one further nanomaterial film have different emission

wavelengths .

In a further embodiment, the nanomaterial film has an

emission wavelength in the range from 300 nm to 1000 nm.

In a further embodiment, the nanomaterial film has an

emission wavelength in the range from 400 nm to 850 nm. In a further embodiment, the nanomaterial film comprises PbS, PbSe, ZnS, ZnS, CdSe, CdTe or a combination thereof. In a further embodiment, the nanomaterial film comprises a core-shell structure, wherein a composition of an inner material, which forms the core, and a composition of an outer material, which forms the shell, are different. The method of producing a semiconductor device for detection of electromagnetic radiation comprises using a solvent for applying a nanomaterial film above a main surface of a substrate of semiconductor material, at least part of the nanomaterial film having a scintillating property.

The nanomaterial film can be applied by inject printing, by silk-screen printing, by spin coating or by spray coating. Other suitable film deposition techniques may instead be applied .

The following is a more detailed description in conjunction with the appended figures.

Figure 1 is a cross section of a semiconductor device with a nanomaterial film applied on top.

Figure 2 is a cross section of a semiconductor device

partially covered with a nanomaterial film.

Figure 3 is a cross section of a semiconductor device

films of different types of nanomaterials . Figure 4 is a cross section according to Figure 2 of a device with an array of photodetector elements.

Figure 5 is a cross section according to Figure 4 of a device with separate portions of the nanomaterial film.

Figure 6 is a cross section of a further semiconductor device with a nanomaterial film applied on top. Figure 7 is a cross section according to Figure 6 of a device with separate portions of the nanomaterial film.

Figure 8 is a cross section of a semiconductor device with a separate semiconductor layer and a nanomaterial film applied on top.

Figure 9 is a cross section according to Figure 8 of a device with separate portions of the nanomaterial film. Figure 10 is a cross section according to Figure 9 of a

further semiconductor device with a nanomaterial film applied on top.

Figure 11 is a cross section of a semiconductor device with two separate semiconductor layers and a nanomaterial film applied on top.

Figure 12 is a flow chart of methods of patterned deposition of nanodot films.

Figure 13 is a schematic top view of a section of a pixel array . Figure 14 is a schematic top view of an image detection device including the pixel array.

Figure 1 is a cross section of a semiconductor device with a nanomaterial film located on the top surface. The

semiconductor device comprises a substrate 1 of semiconductor material, which may be silicon, silicon carbide, germanium or any combination thereof, for instance. The substrate 1 has a main surface 10 and an opposite main surface 20. An

integrated circuit 2 is arranged in the substrate 1 and may especially be a CMOS circuit, for instance. In the example shown in Figure 1, the integrated circuit 2 is arranged at the main surface 10. The integrated circuit 2 may be

shielded, especially by a metal layer, to prevent light from leaking into the integrated circuit 2. Details of the

integrated circuit 2 are not essential for the invention and are not shown in the figures.

A photodetector element 3 is arranged at the main surface 10. Instead of a single photodetector element 3, a plurality of photodetector elements 3 may be provided and may particularly be arranged to form an array for image detection, for

instance. The photodetector element 3 may be a pn-diode, pin- diode, avalanche photodiode (APD) , single-photon avalanche diode (SPAD) or silicon photo multiplier (SiPM) , for example.

A guard ring 4 may be provided to separate the integrated circuit 2 from the photodetector element 3. If more than one photodetector element 3 is provided, a guard ring 4 may also be arranged between the photodetector elements 3. A

dielectric layer 30, which may be an oxide, nitride or oxynitride of the semiconductor material, or several

alternating layers of oxide and silicon, or a high-k dielectric, such as hafnium oxide, tantalum pentoxide or gadolinium oxide, for instance, is optionally arranged on or above the main surface 10. A nanomaterial film 11 is arranged on the top surface, in particular on or above the dielectric layer 30. The

nanomaterial film 11 may essentially cover the entire top surface of the device. At least part of the nanomaterial film 11 has a scintillating property as explained above. The nanomaterial film 11 may include nanodots, nanorods or nanowires or a combination thereof. It may be made from PbS, PbSe, ZnS, ZnS, CdSe, CdTe, for example, but it may comprise other materials as well. A nanodot film can be applied by inkjet printing, silk-screen printing, spin coating or spray coating, for instance. These methods are known per se and are not described here.

The nanomaterial film 11 may especially comprise a core-shell structure, wherein a composition of an inner material of the nanomaterial film 11, which forms the core, and a composition of an outer material of the nanomaterial film 11, which forms the shell, are different. Part of the nanomaterial film 11 may have an absorbing property. In the device shown in Figure 1, the nanomaterial film 11 covers the entire area of the main surface 10. Instead, the nanomaterial film 11 may only cover a part of the main surface 10. Figure 2 is a cross section according to Figure 1 of a further semiconductor device. Elements of the semiconductor device according to Figure 2 that correspond to elements of the semiconductor device according to Figure 1 are designated with the same reference numerals. In the semiconductor device according to Figure 2, the nanomaterial film 11 does not cover the entire area of the main surface 10. In particular, the nanomaterial film 11 may be confined to cover the area of the photodetector element 3 or array of photodetector

elements 3.

Figure 3 is a cross section according to Figure 1 of a further semiconductor device. Elements of the semiconductor device according to Figure 3 that correspond to elements of the semiconductor device according to Figure 1 are designated with the same reference numerals. The semiconductor device according to Figure 3 comprises a first nanomaterial film 11 and a second nanomaterial film 12, and these nanomaterial films 11, 12 cover different areas of the main surface 10. The nanomaterial films 11, 12 may especially comprise two different types of nanodots, nanorods or nanowires or

combinations thereof. In particular, the first nanomaterial film 11 may be a scintillating film and the second

nanomaterial film 12 may absorb the incident radiation.

In the example shown in Figure 3, the area of the

photodetector element 3 or array of photodetector elements 3 is covered with the first nanomaterial film 11, which is a light-emitting film. The area of the integrated circuit 2 and the guard ring 4 is covered with the second nanomaterial film 12, which does not emit light.

Figure 4 is a cross section according to Figure 2 of a further semiconductor device. Elements of the semiconductor device according to Figure 4 that correspond to elements of the semiconductor device according to Figure 2 are designated with the same reference numerals. The semiconductor device according to Figure 4 comprises a plurality of photodetector elements 3, which may especially be arranged in an array for image detection, for instance. One single scintillating nanomaterial film 11 covers the area of the array of

photodetector elements 3. A solder ball 19 may be provided on a terminal of the integrated circuit 2, and a bonding wire 29 may be applied to the solder ball 29 for external electric connection .

Figure 5 is a cross section according to Figure 4 of a further semiconductor device. Elements of the semiconductor device according to Figure 5 that correspond to elements of the semiconductor device according to Figure 4 are designated with the same reference numerals. The semiconductor device according to Figure 5 comprises a plurality of photodetector elements 3, which may especially be arranged in an array for image detection, for instance. Each photodetector element 3 is covered by a nanomaterial film 11, 13. Figure 5 shows a first nanomaterial film 11 and further nanomaterial films 13, by way of example. Each photodetector element 3 can be provided with a separate scintillating nanomaterial film 11, 13, thus enabling spectral CT, for instance.

Figure 6 is a cross section according to Figure 1 of a further semiconductor device. Elements of the semiconductor device according to Figure 6 that correspond to elements of the semiconductor device according to Figure 1 are designated with the same reference numerals. The semiconductor device according to Figure 6 comprises a further dielectric layer 31 on the opposite main surface 20. An integrated circuit 2 is arranged at the opposite main surface 20. A wiring comprising metal layers 21 and vias 23 is arranged in the dielectric layer 30. A further wiring comprising further metal layers 22 and further vias 24 is arranged in the further dielectric layer 31. Contact pads 8 may be arranged on the further metal layers 22 to provide contact areas for the application of external electric contacts like solder balls 6. An

electrically conductive redistribution layer 7 may be

arranged on the further dielectric layer 31. One single scintillating nanomaterial film 11 covers the entire main surface 10. Through-substrate vias 5 comprising an electrically

conductive material may be arranged in the substrate 1 to connect a contact area 18 of a metal layer 21 with a further contact area 28 of the redistribution layer 7 or with a contact area of one of the further metal layers 22. The through-substrate vias 5 are suitable to establish electric connections between the photodetector elements 3 and the integrated circuit 2.

Figure 7 is a cross section according to Figure 6 of a further semiconductor device. Elements of the semiconductor device according to Figure 7 that correspond to elements of the semiconductor device according to Figure 6 are designated with the same reference numerals. The semiconductor device according to Figure 7 comprises a plurality of photodetector elements 3, which may especially be arranged in an array for image detection, for instance. Each photodetector element 3 is covered by a nanomaterial film 11, 13. Figure 7 shows a first nanomaterial film 11 and further nanomaterial films 13, by way of example. Each photodetector element 3 can be provided with a separate scintillating nanomaterial film 11, 13, thus enabling spectral CT, for instance. Figure 8 is a cross section according to Figure 6 of a further semiconductor device. Elements of the semiconductor device according to Figure 8 that correspond to elements of the semiconductor device according to Figure 6 are designated with the same reference numerals. The semiconductor device according to Figure 8 comprises a semiconductor layer 14, which may be a thinned further semiconductor substrate, for instance, and second further dielectric layer 32 on the semiconductor layer 14. An implant layer 15, which may be formed by an implantation of a dopant, can be provided at the boundary between the semiconductor layer 14 and the second further dielectric layer 32. One single scintillating

nanomaterial film 11 covers the entire main surface 10. The photodetector elements 3 and the optional guard rings 4 are arranged in the semiconductor layer 14. The wirings 21, 22, 23, 24 and the through-substrate vias 5 can be adapted to connect the photodetector elements 3 with the integrated circuit 2.

Figure 9 is a cross section according to Figure 8 of a further semiconductor device. Elements of the semiconductor device according to Figure 9 that correspond to elements of the semiconductor device according to Figure 8 are designated with the same reference numerals. The semiconductor device according to Figure 9 comprises a plurality of photodetector elements 3, which may especially be arranged in an array for image detection, for instance. Each photodetector element 3 is covered by a nanomaterial film 11, 13. Figure 9 shows a first nanomaterial film 11 and further nanomaterial films 13, by way of example. Each photodetector element 3 can be provided with a separate scintillating nanomaterial film 11, 13, thus enabling spectral CT, for instance. Figure 10 is a cross section according to Figure 9 of a further semiconductor device. Elements of the semiconductor device according to Figure 10 that correspond to elements of the semiconductor device according to Figure 9 are designated with the same reference numerals. In the semiconductor device according to Figure 10, the integrated circuit 2 is arranged at the main surface 10. The electric connections between the photodetector elements 3 and the integrated circuit 2 are established by metal interconnections of the wiring. Such a conductive structure may be produced by applying conductors on two separate substrates, which are then connected by wafer bonding, for example. The electric connections at the

opposite main surface 20 are provided by a structured

electrically conductive layer, which can especially be a redistribution layer 7. Solder balls 6 can directly be applied on contact areas 9 of the redistribution layer 7.

The semiconductor device according to Figure 10 comprises a plurality of photodetector elements 3, which may especially be arranged in an array for image detection, for instance, and each photodetector element 3 is covered by a nanomaterial film 11, 13. Figure 10 shows a first nanomaterial film 11 and further nanomaterial films 13, by way of example. Each photodetector element 3 can be provided with a separate scintillating nanomaterial film 11, 13, thus enabling

spectral CT, for instance. In an alternative embodiment according to Figure 10, one single scintillating nanomaterial film 11 covers the entire main surface 10.

Further vias 25 may be arranged between sections of the metal layers 21 to form a metal interconnect 26 under the guard rings 4. The metal interconnect 26 improves the separation of the pixels, each of which includes the region of one of the photodetector elements 3.

Figure 11 is a cross section according to Figure 9 of a further semiconductor device. Elements of the semiconductor device according to Figure 11 that correspond to elements of the semiconductor device according to Figure 9 are designated with the same reference numerals. In the semiconductor device according to Figure 11, the integrated circuit 2 is arranged at the main surface 10. A further semiconductor layer 16, which may be a thinned further semiconductor substrate, for instance, and a third further dielectric layer 33 are

arranged between the substrate 1 and the semiconductor layer 14. A further integrated circuit 17 can be arranged in the further semiconductor layer 16. The integrated circuit 2 may especially be provided as a digital CMOS circuit, while the further integrated circuit 17 may especially be provided as an analog CMOS circuit, for example. The semiconductor device according to Figure 11 comprises a plurality of photodetector elements 3, which may especially be arranged in an array for image detection, for instance. Each photodetector element 3 is covered by a nanomaterial film 11, 13. Figure 11 shows a first nanomaterial film 11 and further nanomaterial films 13, by way of example. Each photodetector element 3 can be provided with a separate scintillating nanomaterial film 11, 13, thus enabling

spectral CT, for instance. In an alternative embodiment according to Figure 11, one single scintillating nanomaterial film 11 covers the entire device.

Further metal interconnects 27 may be arranged penetrating the dielectric layer 30, the further semiconductor layer 16 and the third further dielectric layer 33, as shown in Figure 11. Apart from the purpose of separating the pixels, the further metal interconnects 27 may be provided as electric connections between the photodetector elements 3 and the integrated circuit 2.

In the semiconductor device comprising a plurality of photodetector elements and scintillating films, a first incoming radiation energy is transformed to light of a first wavelength by a first nanomaterial film. The corresponding photodetector element converts this light into a first photocurrent . A second incoming radiation energy is

transformed to light of a second wavelength by a second nanomaterial film. The corresponding photodetector element converts this light into a second photocurrent. This

procedure can similarly be applied to three or more energy levels, using three or more nanomaterial films and

photodetector elements. Figure 12 is a flow chart of methods of producing patterned nanodot films. These methods include inkjet printing, silk- screen printing, lithography with subsequent spin coating and lift-off by removing the resist mask, and spin coating with subsequent lithography, etching and removal of the resist mask.

In the manufacturing process, the nanomaterial film 11 is applied on top of a semiconductor chip or wafer after the standard process, in particular after the back end of line (BEOL) .

Figure 13 is a schematic top view of a section of a pixel array 34. The area of a conventional pixel, which has typically a size of approximately 1 mm · 1 mm, is divided in at least four parts. In the example shown in Figure 13, the area of a conventional pixel is divided into four quadrants, each of which has a size of approximately 250 ym · 250 ym. On top of each quadrant, a scintillating nanomaterial film is deposited. Each nanomaterial film is configured to have its absorption spectrum maximized in a certain x-ray energy range and emits light of a distinct wavelength or spectrum. In the example shown in Figure 13, the quadrants are adapted to two wavelengths λΐ and λ2, according to a checkered pattern.

Other arrangements may be suitable as well.

The photodetector elements 3 located under the quadrants sense the different wavelengths λΐ, λ2. Hence it is possible to compute the x-ray spectrum from the different electrical signals, which can be evaluated by the integrated circuit 2 in the substrate 1. Finally, a digital value for each light intensity can be generated. The pixels may be covered by a pattern optimized for one wavelength (energy) . The final image can be reconstructed by interpolating the missing wavelengths from the neighbouring pixels, similarly to RGB color imaging for visible light.

Figure 14 is a schematic top view of an image detection device including the pixel array 34. The remaining surface area, outside the pixel array 34, can be covered with an absorbing nanomaterial film. This surface area covers different regions of the device, which may be disposed in the following manner, by way of example. A first region 35 may be provided for power distribution and the arrangement of I/O pads, a second region 36 for row addressing, and a third region 37 for control and/or logic circuits. A column

amplifier may be arranged in a fourth region 38, which can also accommodate components for analog-to-digital conversion and multiplexing. Figure 14 also shows input nodes 39 for clock and control signals and output nodes 40.

The properties of a nanodot, nanorod or nanowire film can be adapted to obtain absorption in a desired range of radiation energies and emission in a desired range of wavelengths. As nano materials have tunable emission lifetimes, they enable to realize ultra-fast scintillators. A nanodot, nanorod or nanowire film can be made thinner than a conventional scintillator and also laterally more compact. These

advantages result in substantially smaller pixel sizes, higher resolution, lower crosstalk between pixels and better modulation transfer function of a high-energy electromagnetic radiation imaging system, in particular x-ray or CT imaging systems with spectral x-ray analysis capabilities.

List of reference numerals

1 substrate

2 integrated circuit

3 photodetector element

4 guard ring

5 through-substrate via

6 solder ball

7 redistribution layer

8 contact pad

9 contact area

10 main surface

11 nanomaterial film

12 further nanomaterial film 13 further nanomaterial film

14 semiconductor layer

15 implant layer

16 further semiconductor layer

17 further integrated circuit 18 contact area

19 solder ball

20 opposite main surface

21 metal layer

22 further metal layer

23 via

24 further via

25 further via

26 metal interconnect

27 further metal interconnect 28 further contact area

29 bonding wire

30 dielectric layer

31 further dielectric layer second further dielectric layer third further dielectric layer pixel array

first region

second region

third region

fourth region

input

output