Title:
SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2007/091326
Kind Code:
A1
Abstract:
Over an insulating film (31) having a plug (35) buried therein, there are sequentially
formed a second component releasing region (45) made of a first component and
a second component, a solid electrolyte region (46) made of a chalcogenide, and
an upper electrode region (47). The second component releasing region (45) of
the first component and the second component is formed of domed electrode portions
(43) and an insulating film (44) burying the peripheries of the electrode portions
(43), and at least one electrode portion (43) exists over a plug (34). The electrode
portions (43) are formed of a first portion made of the first component such as
a tantalum oxide stable even if fed with an electric field, and a second component
such as copper or silver diffusible to migrate into a solid electrolyte region
(42) when fed with the electric field. Information is stored when the second component
fed from the electrode portions (43) migrates in the solid electrolyte region
(46).
Inventors:
TERAO MOTOYASU (JP)
KUROTSUCHI KENZO (JP)
TAKEMURA RIICHIRO (JP)
TAKAURA NORIKATSU (JP)
HANZAWA SATORU (JP)
KUROTSUCHI KENZO (JP)
TAKEMURA RIICHIRO (JP)
TAKAURA NORIKATSU (JP)
HANZAWA SATORU (JP)
Application Number:
PCT/JP2006/302240
Publication Date:
August 16, 2007
Filing Date:
February 09, 2006
Export Citation:
Assignee:
HITACHI LTD (JP)
TERAO MOTOYASU (JP)
KUROTSUCHI KENZO (JP)
TAKEMURA RIICHIRO (JP)
TAKAURA NORIKATSU (JP)
HANZAWA SATORU (JP)
TERAO MOTOYASU (JP)
KUROTSUCHI KENZO (JP)
TAKEMURA RIICHIRO (JP)
TAKAURA NORIKATSU (JP)
HANZAWA SATORU (JP)
International Classes:
H01L27/10; H01L49/02
Foreign References:
| JP2002536840A | 2002-10-29 |
Attorney, Agent or Firm:
TSUTSUI, Yamato (6th Floor Kokusai Chusei Kaikan, 14, Gobanch, Chiyoda-ku Tokyo, JP)
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