SEMICONDUCTOR DEVICE, LAMINATE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND LAMINATE MANUFACTURING METHOD

WIPO Patent Application WO/2018/159186

A1

Provided are: a semiconductor device and a laminate having good electrical insulation properties, high operational reliability, and high conductivity even when an anisotropic conductive member has a crack; and a manufacturing method of the semiconductor device, and a manufacturing method of the laminate. The semiconductor device has: an anisotropic conductive member that has an insulating base material, and a plurality of conductive paths which are provided so as to penetrate the insulating base material in the thickness direction and to be electrically insulated from one another; and at least two connection members each provided with electrodes. At least one of said at least two connection members is a semiconductor element. The anisotropic conductive member has an electrode connection region connected to the electrodes, and an electrode non-connection region not connected to the electrodes. Said at least two connection members are electrically connected by means of the anisotropic conductive member. The average value of a total crack length per unit area is 1 µm/mm2 or lower in the electrode connection region.

YAMASHITA KOSUKE (JP)

PCT/JP2018/002855

September 07, 2018

January 30, 2018

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FUJIFILM CORP (JP)

H01L21/60; H01L25/065; H01L25/07; H01L25/18; H01R11/01; H05K3/32

WO2015012234A1

2015-01-29

JP2004158701A	2004-06-03
JPH03289010A	1991-12-19
JP2003124258A	2003-04-25
JP2000286293A	2000-10-13
JP2011169854A	2011-09-01

NAKASHIMA Junko et al. (JP)

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