SEMICONDUCTOR DEVICE, LAYERED SEMICONDUCTOR DEVICE, SEALED-THEN-LAYERED SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREFOR

Title:

SEMICONDUCTOR DEVICE, LAYERED SEMICONDUCTOR DEVICE, SEALED-THEN-LAYERED SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREFOR

Document Type and Number:

WIPO Patent Application WO/2015/151417

Kind Code:

A1

Abstract:

This invention is a semiconductor device that contains a semiconductor element. Said semiconductor device also contains an above-semiconductor-element metal pad and metal wiring, both of which are electrically connected to the semiconductor element. The metal wiring is electrically connected to a through-electrode and a solder bump. The semiconductor device has a first insulating layer on which the semiconductor element is placed, a second insulating layer formed on top of the semiconductor element, and a third insulating layer formed on top of the second insulating layer. The metal wiring is electrically connected to the semiconductor element via the above-semiconductor-element metal pad on the top surface of the second insulating layer and passes through the second insulating layer from the top surface thereof to electrically connect to the abovementioned through-electrode on the bottom surface of the second insulating layer. Under-semiconductor-element metal wiring is laid out between the first insulating layer and the semiconductor element and is electrically connected to the aforementioned metal wiring on the bottom surface of the second insulating layer. This results in a semiconductor device that is easy to place on a circuit board, is easy to stack, and exhibits minimal warpage even if the density of the metal wiring is high.

Inventors:

TAKEMURA KATSUYA (JP)
SOGA KYOKO (JP)
ASAI SATOSHI (JP)
KONDO KAZUNORI (JP)
SUGO MICHIHIRO (JP)
KATO HIDETO (JP)

Application Number:

PCT/JP2015/001367

Publication Date:

October 08, 2015

Filing Date:

March 12, 2015

Export Citation:

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Assignee:

SHINETSU CHEMICAL CO (JP)

International Classes:

H01L23/12; C25D5/02; C25D7/00; H01L21/3205; H01L21/768; H01L23/52; H01L23/522; H01L25/10; H01L25/11; H01L25/18; H05K1/11; H05K3/28; H05K3/40

Domestic Patent References:

WO2011122228A1

2011-10-06

Foreign References:

JP2013197382A	2013-09-30
US20110298110A1	2011-12-08
JP2013030593A	2013-02-07
US20080246126A1	2008-10-09
JP2006295114A	2006-10-26

Other References: