Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE EVALUATION METHOD
Document Type and Number:
WIPO Patent Application WO/2018/020961
Kind Code:
A1
Abstract:
The present invention provides a semiconductor device manufacturing method comprising forming a fin structure portion on a semiconductor silicon substrate, performing ion injection into the fin structure portion, and then performing recovery heat processing on the semiconductor silicon substrate to re-crystalize silicon in the fin structure portion. The semiconductor device manufacturing method is characterized in that the fin structure portion is processed in such a way that an end face of the {111} plane of the semiconductor silicon does not appear on a side wall of the fin structure portion that is formed. In this way, the semiconductor device manufacturing method prevents introduction of defects into the fin structure portion when the fin structure portion is subjected to ion injection and the recovery heat processing is performed.
Inventors:
OHTSUKI TSUYOSHI (JP)
NAKASUGI SUNAO (JP)
TAKENO HIROSHI (JP)
SUZUKI KATSUYOSHI (JP)
NAKASUGI SUNAO (JP)
TAKENO HIROSHI (JP)
SUZUKI KATSUYOSHI (JP)
Application Number:
PCT/JP2017/024362
Publication Date:
February 01, 2018
Filing Date:
July 03, 2017
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/265; H01L21/20; H01L21/336; H01L21/66; H01L29/78
Domestic Patent References:
| WO1997006564A1 | 1997-02-20 | |||
| WO2016166930A1 | 2016-10-20 |
Foreign References:
| JP2013197342A | 2013-09-30 | |||
| JP2014063897A | 2014-04-10 | |||
| JP2005236305A | 2005-09-02 | |||
| US20150024565A1 | 2015-01-22 | |||
| US7547637B2 | 2009-06-16 | |||
| JPS60145665A | 1985-08-01 | |||
| JP2002158357A | 2002-05-31 | |||
| JP2006517060A | 2006-07-13 |
Other References:
TAKASHI MATSUKAWA ET AL.: "FinFET no Denryu Tachiagari Den'atsu no Baratsuki no Kaiseki: Kinzoku Gate Shigoto Kansu Baratsuki no Eikyo", DAI 74 KAI JSAP AUTUMN MEETING KOEN YOKOSHU, 2013, pages 13 - 150
TAKASHI MATSUKAWA ET AL.: "Hishoshitsu Kinzoku Gate ni yoru FinFET no Tokusei no Baratsuki Yokusei", DAI 60 KAI JSAP SPRING MEETING KOEN YOKOSHU, 2013, pages 13 - 175
MASAO TAMURA ET AL.: "Lattice Defects in High- Dose As Implantation into Localized Si Area", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 27, no. 12, December 1988 (1988-12-01), pages 2209 - 2217
TAKASHI MATSUKAWA ET AL.: "Hishoshitsu Kinzoku Gate ni yoru FinFET no Tokusei no Baratsuki Yokusei", DAI 60 KAI JSAP SPRING MEETING KOEN YOKOSHU, 2013, pages 13 - 175
MASAO TAMURA ET AL.: "Lattice Defects in High- Dose As Implantation into Localized Si Area", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 27, no. 12, December 1988 (1988-12-01), pages 2209 - 2217
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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