SEMICONDUCTOR DEVICE MANUFACTURING METHOD, RECORDING MEDIUM, AND SUBSTRATE TREATMENT DEVICE

Title:

SEMICONDUCTOR DEVICE MANUFACTURING METHOD, RECORDING MEDIUM, AND SUBSTRATE TREATMENT DEVICE

Document Type and Number:

WIPO Patent Application WO/2022/059170

Kind Code:

A1

Abstract:

The present invention is capable of improving the electrical characteristics of a metal-containing film and/or throughput.　This semiconductor device manufacturing method comprises: (a) a step for accommodating a substrate in a treatment container; (b) a step for supplying a metal-containing gas to the substrate; (c) a step for supplying a first reducing gas to the substrate; and (d) a step for supplying a second reducing gas, differing from the first reducing gas, to the substrate. Steps (b), (c) and (d) are implemented one or more times to thereby form a metal-containing film on the substrate.

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Inventors:

OGAWA ARITO (JP)
KURIBAYASHI KOEI (JP)

Application Number:

PCT/JP2020/035478

Publication Date:

March 24, 2022

Filing Date:

September 18, 2020

Export Citation:

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Assignee:

KOKUSAI ELECTRIC CORP (JP)

International Classes:

H01L21/285; C23C16/455; H01L21/28

Foreign References:

JP2020513065A	2020-04-30
JP2020029618A	2020-02-27

Attorney, Agent or Firm:

TAIYO, NAKAJIMA & KATO (JP)

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