Title:
SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME
Document Type and Number:
WIPO Patent Application WO/2018/123435
Kind Code:
A1
Abstract:
A semiconductor device is provided with: a substrate (10); an insulating film (12) formed between the top surface of the substrate (10) and a floating gate (13); a first oxide film (21) formed on the top surface of the floating gate (13); a silicon nitride film (22) formed on the top surface of the first oxide film (21); and a second oxide film (23) formed on the top surface of the silicon nitride film (22), wherein at least on the top part of the floating gate (13), the film thickness of the second oxide film (23) is the film thickness of the silicon nitride film (22) or greater.
Inventors:
BANNO EISUKE (JP)
Application Number:
PCT/JP2017/043182
Publication Date:
July 05, 2018
Filing Date:
November 30, 2017
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L27/11521; H01L21/316; H01L21/318; H01L21/336; H01L29/788; H01L29/792
Foreign References:
| JP2012074466A | 2012-04-12 | |||
| JP2015106572A | 2015-06-08 | |||
| JP2000340562A | 2000-12-08 | |||
| JP2009026802A | 2009-02-05 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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