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Title:
SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME
Document Type and Number:
WIPO Patent Application WO/2021/075162
Kind Code:
A1
Abstract:
Provided is a semiconductor device capable of preventing, inter alia, the decomposition reaction of an antireflection film provided on a semiconductor substrate and the corrosion of a wiring layer, and capable of improving reliability. The semiconductor device comprises: a wiring layer (11); a titanium nitride layer (21) provided on the wiring layer (11); a titanium oxynitride layer (22) provided on the titanium nitride layer (21); a titanium oxide layer (23) provided on the titanium oxynitride layer (22); and surface protective films (31, 32) provided on the titanium oxide layer (23). The semiconductor device also has an opening (11b) that passes through the titanium nitride layer (21), the titanium oxynitride layer (22), the titanium oxide layer (23), and the surface protective films (31, 32) to expose a part of the wiring layer (11), and the exposed part of the wiring layer (11) constitutes a pad (11a).

Inventors:
YAMAJI MASAHARU (JP)
KARINO TAICHI (JP)
SUMIDA HITOSHI (JP)
ITO HIDEAKI (JP)
Application Number:
PCT/JP2020/032447
Publication Date:
April 22, 2021
Filing Date:
August 27, 2020
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L21/768; H01L21/3205; H01L21/60; H01L23/522; H01L23/532
Foreign References:
JP2019106485A2019-06-27
JP2010272621A2010-12-02
JPH04212459A1992-08-04
Attorney, Agent or Firm:
HIROSE Hajime et al. (JP)
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